Role of oxygen in Hf-based high-k gate stacks on Vfb shifts

Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have investigated the role of oxygen in Hf-based high-k gate stacks on Vfb shift. It is clearly shown that the Vfb of the HfSiOx-based high-k materials of the weak ionic oxide was almost constant irrespective of the oxidation annealing temperature. On the other hand, the HfO2-based high-k materials of the strong ionic oxide caused the positive Vfb shifts by introducing additional oxygen into high-k films. These suggest that the control of strength of ionic bond and oxygen content due to the oxygen transfer at hetero interface of ionic high-k/covalent SiO2 is a key if it assumes that the Vfb shift occurs dominantly at high-k/SiO2 interface.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages986-989
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2010 Nov 12010 Nov 4

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period10/11/110/11/4

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Nabatame, T., Ohi, A., & Chikyow, T. (2010). Role of oxygen in Hf-based high-k gate stacks on Vfb shifts. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 986-989). [5667509] (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667509