Role of nitrogen incorporation into Hf-based high-& gate dielectrics for termination of local current leakage paths

Heiji Watanabe, Satoshi Kamiyama, Naoto Umezawa, Kenji Shiraishi, Shiniti Yoshida, Yasumasa Watanabe, Tsunetoshi Arikado, Toyohiro Chikyow, Keisaku Yamada, Kiyoshi Yasutake

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

We studied effects of nitrogen incorporation into Hf-based high-k gate dielectrics on local insulating properties by conductive atomic force microscopy. Nitrogen-incorporated HfSiO/HfO2/SiO2 gate stacks exhibited excellent dielectric reliability, whereas we observed the creation of local leakage sites for untreated gate stacks, i.e., without nitridation. Both types of high-k dielectric layers were crystallized, and there was no relationship between the current leakage sites and surface morphology. These findings indicate that grain boundaries of the high-k films do not act as the leakage sites. Instead, we propose nitrogen incorporation as an important method for terminating the current leakage paths and discuss detailed mechanisms based on first-principles calculations.

Original languageEnglish
Pages (from-to)L1333-L1336
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number42-45
DOIs
Publication statusPublished - 2005 Dec 1
Externally publishedYes

Keywords

  • Conductive atomic force microscopy
  • Crystallization
  • Current leakage path
  • Dielectric breakdown
  • First-principles calculations
  • Grain boundary
  • High-k gate dielectrics
  • Nitridation
  • Oxygen vacancy
  • Reliability

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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