Role of nitrogen atoms in reduction of electron charge traps in Hf-based high-κ dielectrics

Naoto Umezawa; K. Shiraishi; K. Torii; M. Boero; T. Chikyow; H. Watanabe; K. Yamabe; T. Ohno; K. Yamada; Y. Nara

doi:10.1109/LED.2007.894655

Role of nitrogen atoms in reduction of electron charge traps in Hf-based high-κ dielectrics

Naoto Umezawa, K. Shiraishi, K. Torii, M. Boero, T. Chikyow, H. Watanabe, K. Yamabe, T. Ohno, K. Yamada, Y. Nara

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Effects of nitrogen incorporation on suppression of electron charge traps in Hf-based high-κ gate dielectrics have been studied by first-principles calculations, focusing on interactions between N atoms and electrons trapped at oxygen vacancies (V_O's). Our total energy calculations revealed that the formation energy of a doubly occupied state of V_O is significantly increased in HfO_xN_y compared to that in HfO₂. This clearly indicates that the electron charge traps at V_O's are considerably suppressed by N incorporation.

Original language	English
Pages (from-to)	363-365
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	5
DOIs	https://doi.org/10.1109/LED.2007.894655
Publication status	Published - 2007 May

Keywords

Dielectric materials
Doping
Hafnium compounds
MOSFETs
Trapping+

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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abstract = "Effects of nitrogen incorporation on suppression of electron charge traps in Hf-based high-κ gate dielectrics have been studied by first-principles calculations, focusing on interactions between N atoms and electrons trapped at oxygen vacancies (VO's). Our total energy calculations revealed that the formation energy of a doubly occupied state of VO is significantly increased in HfOxNy compared to that in HfO2. This clearly indicates that the electron charge traps at VO's are considerably suppressed by N incorporation.",

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author = "Naoto Umezawa and K. Shiraishi and K. Torii and M. Boero and T. Chikyow and H. Watanabe and K. Yamabe and T. Ohno and K. Yamada and Y. Nara",

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AU - Umezawa, Naoto

AU - Shiraishi, K.

AU - Torii, K.

AU - Boero, M.

AU - Chikyow, T.

AU - Watanabe, H.

AU - Yamabe, K.

AU - Ohno, T.

AU - Yamada, K.

AU - Nara, Y.

PY - 2007/5

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N2 - Effects of nitrogen incorporation on suppression of electron charge traps in Hf-based high-κ gate dielectrics have been studied by first-principles calculations, focusing on interactions between N atoms and electrons trapped at oxygen vacancies (VO's). Our total energy calculations revealed that the formation energy of a doubly occupied state of VO is significantly increased in HfOxNy compared to that in HfO2. This clearly indicates that the electron charge traps at VO's are considerably suppressed by N incorporation.

AB - Effects of nitrogen incorporation on suppression of electron charge traps in Hf-based high-κ gate dielectrics have been studied by first-principles calculations, focusing on interactions between N atoms and electrons trapped at oxygen vacancies (VO's). Our total energy calculations revealed that the formation energy of a doubly occupied state of VO is significantly increased in HfOxNy compared to that in HfO2. This clearly indicates that the electron charge traps at VO's are considerably suppressed by N incorporation.

KW - Dielectric materials

KW - Doping

KW - Hafnium compounds

KW - MOSFETs

KW - Trapping+

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