Effects of nitrogen incorporation on suppression of electron charge traps in Hf-based high-κ gate dielectrics have been studied by first-principles calculations, focusing on interactions between N atoms and electrons trapped at oxygen vacancies (VO's). Our total energy calculations revealed that the formation energy of a doubly occupied state of VO is significantly increased in HfOxNy compared to that in HfO2. This clearly indicates that the electron charge traps at VO's are considerably suppressed by N incorporation.
- Dielectric materials
- Hafnium compounds
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering