Role of nitrogen atoms in reduction of electron charge traps in Hf-based high-κ dielectrics

Naoto Umezawa, K. Shiraishi, K. Torii, M. Boero, T. Chikyow, H. Watanabe, K. Yamabe, T. Ohno, K. Yamada, Y. Nara

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Effects of nitrogen incorporation on suppression of electron charge traps in Hf-based high-κ gate dielectrics have been studied by first-principles calculations, focusing on interactions between N atoms and electrons trapped at oxygen vacancies (VO's). Our total energy calculations revealed that the formation energy of a doubly occupied state of VO is significantly increased in HfOxNy compared to that in HfO2. This clearly indicates that the electron charge traps at VO's are considerably suppressed by N incorporation.

Original languageEnglish
Pages (from-to)363-365
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number5
DOIs
Publication statusPublished - 2007 May

Keywords

  • Dielectric materials
  • Doping
  • Hafnium compounds
  • MOSFETs
  • Trapping+

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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