Abstract
Effects of nitrogen incorporation on suppression of electron charge traps in Hf-based high-κ gate dielectrics have been studied by first-principles calculations, focusing on interactions between N atoms and electrons trapped at oxygen vacancies (VO's). Our total energy calculations revealed that the formation energy of a doubly occupied state of VO is significantly increased in HfOxNy compared to that in HfO2. This clearly indicates that the electron charge traps at VO's are considerably suppressed by N incorporation.
Original language | English |
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Pages (from-to) | 363-365 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 28 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2007 May |
Externally published | Yes |
Keywords
- Dielectric materials
- Doping
- Hafnium compounds
- MOSFETs
- Trapping+
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering