Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

Firman Mangasa Simanjuntak, Pragya Singh, Sridhar Chandrasekaran, Franky Juanda Lumbantoruan, Chih Chieh Yang, Chu Jie Huang, Chun Chieh Lin, Tseung Yuen Tseng

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (>104 cycles) with a sufficient memory window (103 times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.

Original languageEnglish
Article number124003
JournalSemiconductor Science and Technology
Volume32
Issue number12
DOIs
Publication statusPublished - 2017 Nov 9
Externally publishedYes

Keywords

  • RRAM
  • electrochemical metallization device
  • nanorods
  • resistive switching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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