Role of interface layers and localized states in TiAl-based Ohmic contacts to p-type 4H-SiC

M. Gao, S. Tsukimoto, S. H. Goss, S. P. Tumakha, T. Onishi, M. Murakami, L. J. Brillson

    Research output: Contribution to journalArticlepeer-review

    24 Citations (Scopus)

    Abstract

    We have investigated the roles of interfacial reaction, work function variation, and localized states of annealed Ti/Al ohmic contacts to p-type 4H-SiC. The Al was found to be absent in the near interface region. The possibility of additional p-doping by Al indiffusion in the top SiC layer was ruled out. The work function of Ti 3SiC 2, the direct contact layer to SiC, was determined to be intermediate between Ti and p-SiC, leading to a considerably lowered Schottky barrier height. Reaction-induced interfacial states were observed in the near-interface SiC, which may further reduce the barrier height and cause the formation of ohmic contact.

    Original languageEnglish
    Pages (from-to)277-284
    Number of pages8
    JournalJournal of Electronic Materials
    Volume36
    Issue number4
    DOIs
    Publication statusPublished - 2007 Apr

    Keywords

    • Interface
    • Localized states
    • Ohmic contact
    • Ti SiC
    • Work function
    • p-type 4H-SiC

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Fingerprint

    Dive into the research topics of 'Role of interface layers and localized states in TiAl-based Ohmic contacts to p-type 4H-SiC'. Together they form a unique fingerprint.

    Cite this