Role of hydrogen prepairing in the hydrogen desorption kinetics from Si(100)-2×1: Effects of hydrogenating-gas and thermal history

Hideki Nakazawa, Maki Suemitsu, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Hydrogen desorption kinetics from Si(100)-2×1:H has been systematically investigated using temperature-programmed desorption (TPD) on several hydrogenating gases and thermal conditions. As a result, the desorption kinetic order with the hydrogen coverage was found to increase in the order: atomic hydrogen<disilane<silane and room-temperature adsorption<high-temperature adsorption<post-annealing. These variations in kinetic order, depicted as a TPD peak shift at low hydrogen coverages, are universally described with a single surface parameter, γ0, the fractional coverage of unpaired hydrogen atoms. Fitting with obtained TPD spectra demonstrates that γ0 is a delicate function of the hydrogenating gas and thermal history.

Original languageEnglish
Pages (from-to)177-185
Number of pages9
JournalSurface Science
Volume465
Issue number1-2
DOIs
Publication statusPublished - 2000 Oct 10

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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