Role of high-k interlayer in ZrO2/high-k/ZrO2 insulating multilayer on electrical properties for DRAM capacitor

T. Onaya; T. Nabatame; T. Sawada; K. Kurishima; N. Sawamoto; A. Ohi; T. Chikyow; A. Ogura

doi:10.1149/07508.0667ecst

Role of high-k interlayer in ZrO₂/high-k/ZrO₂ insulating multilayer on electrical properties for DRAM capacitor

T. Onaya, T. Nabatame, T. Sawada, K. Kurishima, N. Sawamoto, A. Ohi, T. Chikyow, A. Ogura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

We studied characteristic of Metal-Insulator-Metal capacitors with ZrO₂/high-k/ZrO₂ (Z/high-k/Z)-nanolaminate dielectric layers and TiN electrodes. Amorphous Al₂O₃, (Ta/Nb)Ox (TN) and (Ta/Nb)Ox- Al₂O₃ (TNA) as high-k interlayer were prepared by atomic layer deposition and post-deposition annealing. The dielectric constant (k) of ZrO₂ thin film exhibited about 28 because of tetragonal, orthorhombic and cubic phases. The k value of Z/high-k/Znanolaminate dielectric layer is high in order of ZTNZ > ZTNAZ > ZAZ due to the dependence of each k value of Al₂O₃ (∼ 9) and TN (∼29). The ZTNAZ layer exhibited lowest leakage current density of 10^-8 ∼ 10^-7 A/cm² at 0.6 V compared to those of ZAZ and ZTNZ in CET ∼ 1.1 nm. We found that the leakage current property of Z/high-k/Z layer is influenced by not only amorphous structure but also band gap width (conduction band offset of ZrO₂) of high-k interlayer. We conclude that the TNA material is one of the candidate material as high-k interlayer for future DRAM.

Original language	English
Title of host publication	SiGe, Ge, and Related Materials
Subtitle of host publication	Materials, Processing, and Devices 7
Editors	J. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, S. Miyazaki
Publisher	Electrochemical Society Inc.
Pages	667-674
Number of pages	8
Edition	8
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/07508.0667ecst
Publication status	Published - 2016 Jan 1
Externally published	Yes
Event	Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: 2016 Oct 2 → 2016 Oct 7

Publication series

Name	ECS Transactions
Number	8
Volume	75
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting
Country	United States
City	Honolulu
Period	16/10/2 → 16/10/7

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/07508.0667ecst

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Onaya, T., Nabatame, T., Sawada, T., Kurishima, K., Sawamoto, N., Ohi, A., Chikyow, T., & Ogura, A. (2016). Role of high-k interlayer in ZrO₂/high-k/ZrO₂ insulating multilayer on electrical properties for DRAM capacitor. In J. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, & S. Miyazaki (Eds.), SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (8 ed., pp. 667-674). (ECS Transactions; Vol. 75, No. 8). Electrochemical Society Inc.. https://doi.org/10.1149/07508.0667ecst

Role of high-k interlayer in ZrO₂/high-k/ZrO₂ insulating multilayer on electrical properties for DRAM capacitor. / Onaya, T.; Nabatame, T.; Sawada, T.; Kurishima, K.; Sawamoto, N.; Ohi, A.; Chikyow, T.; Ogura, A.

SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. ed. / J. Murota; B. Tillack; M. Caymax; G. Masini; D. L. Harame; S. Miyazaki. 8. ed. Electrochemical Society Inc., 2016. p. 667-674 (ECS Transactions; Vol. 75, No. 8).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Onaya, T, Nabatame, T, Sawada, T, Kurishima, K, Sawamoto, N, Ohi, A, Chikyow, T & Ogura, A 2016, Role of high-k interlayer in ZrO₂/high-k/ZrO₂ insulating multilayer on electrical properties for DRAM capacitor. in J Murota, B Tillack, M Caymax, G Masini, DL Harame & S Miyazaki (eds), SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 edn, ECS Transactions, no. 8, vol. 75, Electrochemical Society Inc., pp. 667-674, Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 16/10/2. https://doi.org/10.1149/07508.0667ecst

Onaya T, Nabatame T, Sawada T, Kurishima K, Sawamoto N, Ohi A et al. Role of high-k interlayer in ZrO₂/high-k/ZrO₂ insulating multilayer on electrical properties for DRAM capacitor. In Murota J, Tillack B, Caymax M, Masini G, Harame DL, Miyazaki S, editors, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 ed. Electrochemical Society Inc. 2016. p. 667-674. (ECS Transactions; 8). https://doi.org/10.1149/07508.0667ecst

Onaya, T. ; Nabatame, T. ; Sawada, T. ; Kurishima, K. ; Sawamoto, N. ; Ohi, A. ; Chikyow, T. ; Ogura, A. / Role of high-k interlayer in ZrO₂/high-k/ZrO₂ insulating multilayer on electrical properties for DRAM capacitor. SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. editor / J. Murota ; B. Tillack ; M. Caymax ; G. Masini ; D. L. Harame ; S. Miyazaki. 8. ed. Electrochemical Society Inc., 2016. pp. 667-674 (ECS Transactions; 8).

@inproceedings{674d6adef8394befa7a298cac83c80a4,

title = "Role of high-k interlayer in ZrO2/high-k/ZrO2 insulating multilayer on electrical properties for DRAM capacitor",

abstract = "We studied characteristic of Metal-Insulator-Metal capacitors with ZrO2/high-k/ZrO2 (Z/high-k/Z)-nanolaminate dielectric layers and TiN electrodes. Amorphous Al2O3, (Ta/Nb)Ox (TN) and (Ta/Nb)Ox- Al2O3 (TNA) as high-k interlayer were prepared by atomic layer deposition and post-deposition annealing. The dielectric constant (k) of ZrO2 thin film exhibited about 28 because of tetragonal, orthorhombic and cubic phases. The k value of Z/high-k/Znanolaminate dielectric layer is high in order of ZTNZ > ZTNAZ > ZAZ due to the dependence of each k value of Al2O3 (∼ 9) and TN (∼29). The ZTNAZ layer exhibited lowest leakage current density of 10-8 ∼ 10-7 A/cm2 at 0.6 V compared to those of ZAZ and ZTNZ in CET ∼ 1.1 nm. We found that the leakage current property of Z/high-k/Z layer is influenced by not only amorphous structure but also band gap width (conduction band offset of ZrO2) of high-k interlayer. We conclude that the TNA material is one of the candidate material as high-k interlayer for future DRAM.",

author = "T. Onaya and T. Nabatame and T. Sawada and K. Kurishima and N. Sawamoto and A. Ohi and T. Chikyow and A. Ogura",

year = "2016",

month = jan,

day = "1",

doi = "10.1149/07508.0667ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "8",

pages = "667--674",

editor = "J. Murota and B. Tillack and M. Caymax and G. Masini and Harame, {D. L.} and S. Miyazaki",

booktitle = "SiGe, Ge, and Related Materials",

edition = "8",

note = "Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",

}

TY - GEN

T1 - Role of high-k interlayer in ZrO2/high-k/ZrO2 insulating multilayer on electrical properties for DRAM capacitor

AU - Onaya, T.

AU - Nabatame, T.

AU - Sawada, T.

AU - Kurishima, K.

AU - Sawamoto, N.

AU - Ohi, A.

AU - Chikyow, T.

AU - Ogura, A.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We studied characteristic of Metal-Insulator-Metal capacitors with ZrO2/high-k/ZrO2 (Z/high-k/Z)-nanolaminate dielectric layers and TiN electrodes. Amorphous Al2O3, (Ta/Nb)Ox (TN) and (Ta/Nb)Ox- Al2O3 (TNA) as high-k interlayer were prepared by atomic layer deposition and post-deposition annealing. The dielectric constant (k) of ZrO2 thin film exhibited about 28 because of tetragonal, orthorhombic and cubic phases. The k value of Z/high-k/Znanolaminate dielectric layer is high in order of ZTNZ > ZTNAZ > ZAZ due to the dependence of each k value of Al2O3 (∼ 9) and TN (∼29). The ZTNAZ layer exhibited lowest leakage current density of 10-8 ∼ 10-7 A/cm2 at 0.6 V compared to those of ZAZ and ZTNZ in CET ∼ 1.1 nm. We found that the leakage current property of Z/high-k/Z layer is influenced by not only amorphous structure but also band gap width (conduction band offset of ZrO2) of high-k interlayer. We conclude that the TNA material is one of the candidate material as high-k interlayer for future DRAM.

AB - We studied characteristic of Metal-Insulator-Metal capacitors with ZrO2/high-k/ZrO2 (Z/high-k/Z)-nanolaminate dielectric layers and TiN electrodes. Amorphous Al2O3, (Ta/Nb)Ox (TN) and (Ta/Nb)Ox- Al2O3 (TNA) as high-k interlayer were prepared by atomic layer deposition and post-deposition annealing. The dielectric constant (k) of ZrO2 thin film exhibited about 28 because of tetragonal, orthorhombic and cubic phases. The k value of Z/high-k/Znanolaminate dielectric layer is high in order of ZTNZ > ZTNAZ > ZAZ due to the dependence of each k value of Al2O3 (∼ 9) and TN (∼29). The ZTNAZ layer exhibited lowest leakage current density of 10-8 ∼ 10-7 A/cm2 at 0.6 V compared to those of ZAZ and ZTNZ in CET ∼ 1.1 nm. We found that the leakage current property of Z/high-k/Z layer is influenced by not only amorphous structure but also band gap width (conduction band offset of ZrO2) of high-k interlayer. We conclude that the TNA material is one of the candidate material as high-k interlayer for future DRAM.

UR - http://www.scopus.com/inward/record.url?scp=84991658442&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84991658442&partnerID=8YFLogxK

U2 - 10.1149/07508.0667ecst

DO - 10.1149/07508.0667ecst

M3 - Conference contribution

AN - SCOPUS:84991658442

T3 - ECS Transactions

SP - 667

EP - 674

BT - SiGe, Ge, and Related Materials

A2 - Murota, J.

A2 - Tillack, B.

A2 - Caymax, M.

A2 - Masini, G.

A2 - Harame, D. L.

A2 - Miyazaki, S.

PB - Electrochemical Society Inc.

T2 - Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting

Y2 - 2 October 2016 through 7 October 2016

ER -