Role of high-k interlayer in ZrO2/high-k/ZrO2 insulating multilayer on electrical properties for DRAM capacitor

T. Onaya, T. Nabatame, T. Sawada, K. Kurishima, N. Sawamoto, A. Ohi, T. Chikyow, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

We studied characteristic of Metal-Insulator-Metal capacitors with ZrO2/high-k/ZrO2 (Z/high-k/Z)-nanolaminate dielectric layers and TiN electrodes. Amorphous Al2O3, (Ta/Nb)Ox (TN) and (Ta/Nb)Ox- Al2O3 (TNA) as high-k interlayer were prepared by atomic layer deposition and post-deposition annealing. The dielectric constant (k) of ZrO2 thin film exhibited about 28 because of tetragonal, orthorhombic and cubic phases. The k value of Z/high-k/Znanolaminate dielectric layer is high in order of ZTNZ > ZTNAZ > ZAZ due to the dependence of each k value of Al2O3 (∼ 9) and TN (∼29). The ZTNAZ layer exhibited lowest leakage current density of 10-8 ∼ 10-7 A/cm2 at 0.6 V compared to those of ZAZ and ZTNZ in CET ∼ 1.1 nm. We found that the leakage current property of Z/high-k/Z layer is influenced by not only amorphous structure but also band gap width (conduction band offset of ZrO2) of high-k interlayer. We conclude that the TNA material is one of the candidate material as high-k interlayer for future DRAM.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Materials
Subtitle of host publicationMaterials, Processing, and Devices 7
EditorsJ. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, S. Miyazaki
PublisherElectrochemical Society Inc.
Pages667-674
Number of pages8
Edition8
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes
EventSymposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2016 Oct 22016 Oct 7

Publication series

NameECS Transactions
Number8
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • Engineering(all)

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