@inproceedings{674d6adef8394befa7a298cac83c80a4,
title = "Role of high-k interlayer in ZrO2/high-k/ZrO2 insulating multilayer on electrical properties for DRAM capacitor",
abstract = "We studied characteristic of Metal-Insulator-Metal capacitors with ZrO2/high-k/ZrO2 (Z/high-k/Z)-nanolaminate dielectric layers and TiN electrodes. Amorphous Al2O3, (Ta/Nb)Ox (TN) and (Ta/Nb)Ox- Al2O3 (TNA) as high-k interlayer were prepared by atomic layer deposition and post-deposition annealing. The dielectric constant (k) of ZrO2 thin film exhibited about 28 because of tetragonal, orthorhombic and cubic phases. The k value of Z/high-k/Znanolaminate dielectric layer is high in order of ZTNZ > ZTNAZ > ZAZ due to the dependence of each k value of Al2O3 (∼ 9) and TN (∼29). The ZTNAZ layer exhibited lowest leakage current density of 10-8 ∼ 10-7 A/cm2 at 0.6 V compared to those of ZAZ and ZTNZ in CET ∼ 1.1 nm. We found that the leakage current property of Z/high-k/Z layer is influenced by not only amorphous structure but also band gap width (conduction band offset of ZrO2) of high-k interlayer. We conclude that the TNA material is one of the candidate material as high-k interlayer for future DRAM.",
author = "T. Onaya and T. Nabatame and T. Sawada and K. Kurishima and N. Sawamoto and A. Ohi and T. Chikyow and A. Ogura",
year = "2016",
month = jan,
day = "1",
doi = "10.1149/07508.0667ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "8",
pages = "667--674",
editor = "J. Murota and B. Tillack and M. Caymax and G. Masini and Harame, {D. L.} and S. Miyazaki",
booktitle = "SiGe, Ge, and Related Materials",
edition = "8",
note = "Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",
}