@inproceedings{f178d3ef10454b1cbaa838f15354e4cd,
title = "Role of hetero interface of ionic/covalent oxides for Pt/high-k/SiO 2/Si MOS capacitors on Vfb shift",
abstract = "We have investigated the role of hetero interface of ionic high-k / covalent SiO2 for Pt gate MOS capacitors with strong and weak ionic high-k dielectrics on Vfb shift. The HfO2-based high-k and HfSiON materials of the strong ionic oxide caused the positive Vfb shifts due to dipole, while the Vfb of the HfSiOx-based high-k materials of the weak ionic oxide was almost constant. These suggest that the ionicity of high-k materials is an important because the oxygen diffusion which is related to the dipole formation strongly depends on the ionicity.",
author = "Toshihide Nabatame and Akihiko Ohi and Toyohiro Chikyow",
year = "2010",
month = dec,
day = "1",
doi = "10.1149/1.3481592",
language = "English",
isbn = "9781566778220",
series = "ECS Transactions",
number = "3",
pages = "59--66",
booktitle = "Physics and Technology of High-k Materials 8",
edition = "3",
note = "8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting ; Conference date: 11-10-2010 Through 15-10-2010",
}