Role of hetero interface of ionic/covalent oxides for Pt/high-k/SiO 2/Si MOS capacitors on Vfb shift

Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We have investigated the role of hetero interface of ionic high-k / covalent SiO2 for Pt gate MOS capacitors with strong and weak ionic high-k dielectrics on Vfb shift. The HfO2-based high-k and HfSiON materials of the strong ionic oxide caused the positive Vfb shifts due to dipole, while the Vfb of the HfSiOx-based high-k materials of the weak ionic oxide was almost constant. These suggest that the ionicity of high-k materials is an important because the oxygen diffusion which is related to the dipole formation strongly depends on the ionicity.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 8
Pages59-66
Number of pages8
Edition3
DOIs
Publication statusPublished - 2010 Dec 1
Event8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 112010 Oct 15

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1110/10/15

ASJC Scopus subject areas

  • Engineering(all)

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