Role of electron traps on the thermal conversion and its suppression for liquid-encapsulated czochralski gaas single crystals

Shigefusa Chichibu, Norio Ohkubo, Satoru Matsumoto

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Concentration depth profiles of both carrier and electron traps shallower than EL2 are investigated for undoped liquid-encapsulated Czochralski GaAs single crystals after annealing in vacuum and ambient arsenic vapor pressure with As metal powders. Thermal conversion near the surface of semi-insulating GaAs annealed in vacuum at 900ºC is suppressed by annealing with ambient arsenic pressure of 100 Torr. The carrier concentration depth profile of thermally converted GaAs, which is an initially semi-insulating substrate, depends not only on the concentration change of EL2 but also on that of native shallow acceptors and deep donors shallower than EL2.

Original languageEnglish
Pages (from-to)1750-1755
Number of pages6
JournalJapanese journal of applied physics
Volume28
Issue number10 R
DOIs
Publication statusPublished - 1989 Oct
Externally publishedYes

Keywords

  • Deep donors
  • El2 out-diffusion
  • Electron traps
  • Leg GaAs, thermal conversion

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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