Role of base layer in CVD Si3N4 stack gate dielectrics on the process controllability and reliability in direct tunneling regime

Koji Eriguchi; Yoshinao Harada; Masaaki Niwa

Role of base layer in CVD Si₃N₄ stack gate dielectrics on the process controllability and reliability in direct tunneling regime

Koji Eriguchi, Yoshinao Harada, Masaaki Niwa

Research output: Contribution to journal › Conference article › peer-review

Abstract

The roles of the base layer in Si₃N₄/SiON stack gate dielectrics on the dielectric reliability, MOSFET performance and process controllability are investigated. The critical SiON-base layer thickness is determined as approx. 1 nm from the TDDB results and the physical analysis based on X-ray photoelectron spectroscopy. The obtained thickness is considered to attribute to the nitrogen profile in the SiON base and the strained layer thickness near SiON/Si interface.

Original language	English
Pages (from-to)	323-326
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1999 Dec 1
Externally published	Yes
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 1999 Dec 5 → 1999 Dec 8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Role of base layer in CVD Si3N4 stack gate dielectrics on the process controllability and reliability in direct tunneling regime",

abstract = "The roles of the base layer in Si3N4/SiON stack gate dielectrics on the dielectric reliability, MOSFET performance and process controllability are investigated. The critical SiON-base layer thickness is determined as approx. 1 nm from the TDDB results and the physical analysis based on X-ray photoelectron spectroscopy. The obtained thickness is considered to attribute to the nitrogen profile in the SiON base and the strained layer thickness near SiON/Si interface.",

author = "Koji Eriguchi and Yoshinao Harada and Masaaki Niwa",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "323--326",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

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T1 - Role of base layer in CVD Si3N4 stack gate dielectrics on the process controllability and reliability in direct tunneling regime

AU - Eriguchi, Koji

AU - Harada, Yoshinao

AU - Niwa, Masaaki

PY - 1999/12/1

Y1 - 1999/12/1

N2 - The roles of the base layer in Si3N4/SiON stack gate dielectrics on the dielectric reliability, MOSFET performance and process controllability are investigated. The critical SiON-base layer thickness is determined as approx. 1 nm from the TDDB results and the physical analysis based on X-ray photoelectron spectroscopy. The obtained thickness is considered to attribute to the nitrogen profile in the SiON base and the strained layer thickness near SiON/Si interface.

AB - The roles of the base layer in Si3N4/SiON stack gate dielectrics on the dielectric reliability, MOSFET performance and process controllability are investigated. The critical SiON-base layer thickness is determined as approx. 1 nm from the TDDB results and the physical analysis based on X-ray photoelectron spectroscopy. The obtained thickness is considered to attribute to the nitrogen profile in the SiON base and the strained layer thickness near SiON/Si interface.

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M3 - Conference article

AN - SCOPUS:0033352173

SN - 0163-1918

SP - 323

EP - 326

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Role of base layer in CVD Si₃N₄ stack gate dielectrics on the process controllability and reliability in direct tunneling regime

Abstract

ASJC Scopus subject areas

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