Role of base layer in CVD Si3N4 stack gate dielectrics on the process controllability and reliability in direct tunneling regime

Koji Eriguchi, Yoshinao Harada, Masaaki Niwa

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

The roles of the base layer in Si3N4/SiON stack gate dielectrics on the dielectric reliability, MOSFET performance and process controllability are investigated. The critical SiON-base layer thickness is determined as approx. 1 nm from the TDDB results and the physical analysis based on X-ray photoelectron spectroscopy. The obtained thickness is considered to attribute to the nitrogen profile in the SiON base and the strained layer thickness near SiON/Si interface.

Original languageEnglish
Pages (from-to)323-326
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999 Dec 1
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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