Role of Al2O3 layer in oxidation resistance of Cu-Al dilute alloys pre-annealed in H2 atmospheres

Sang Hwui Hong, Yongfu Zhu, Kouji Mimura, Minoru Isshiki

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6 Citations (Scopus)


Copper was alloyed with small amounts of Al (0.2, 0.5, 1.0 and 2.0 mass%) to improve the oxidation resistance. Copper (6 N) and the Cu-Al alloys were oxidized at 773-1173 K in 0.1 MPa oxygen atmosphere after hydrogen annealing at 873 K. Continuous very thin Al2O3 layers were formed on the surface of all Cu-Al dilute alloys during the hydrogen annealing. Oxidation resistance of Cu-Al alloys was improved especially for Cu-2.0Al at 773-973 K, while it decreases on increasing the oxidation temperature. Cu-Al alloys followed the parabolic rate law at 1173 K, but most of other cases do not at and below 1073 K. Oxidation resistance for Cu-Al alloys was found relevant to the maintenance of the thin Al2O3 layer at the Cu2O/Cu-Al alloy interface.

Original languageEnglish
Pages (from-to)3692-3702
Number of pages11
JournalCorrosion Science
Issue number11
Publication statusPublished - 2006 Nov


  • Cu-Al alloy
  • Diffusion
  • Oxidation kinetic
  • Oxidation resistance
  • Secondary ion mass spectroscopy (SIMS)
  • Surface AlO layer

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Science(all)


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