Abstract
Copper was alloyed with small amounts of Al (0.2, 0.5, 1.0 and 2.0 mass%) to improve the oxidation resistance. Copper (6 N) and the Cu-Al alloys were oxidized at 773-1173 K in 0.1 MPa oxygen atmosphere after hydrogen annealing at 873 K. Continuous very thin Al2O3 layers were formed on the surface of all Cu-Al dilute alloys during the hydrogen annealing. Oxidation resistance of Cu-Al alloys was improved especially for Cu-2.0Al at 773-973 K, while it decreases on increasing the oxidation temperature. Cu-Al alloys followed the parabolic rate law at 1173 K, but most of other cases do not at and below 1073 K. Oxidation resistance for Cu-Al alloys was found relevant to the maintenance of the thin Al2O3 layer at the Cu2O/Cu-Al alloy interface.
Original language | English |
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Pages (from-to) | 3692-3702 |
Number of pages | 11 |
Journal | Corrosion Science |
Volume | 48 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2006 Nov 1 |
Keywords
- Cu-Al alloy
- Diffusion
- Oxidation kinetic
- Oxidation resistance
- Secondary ion mass spectroscopy (SIMS)
- Surface AlO layer
ASJC Scopus subject areas
- Chemistry(all)
- Chemical Engineering(all)
- Materials Science(all)