Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth

Takeshi Murata, Hideki Nakazawa, Yoshikazu Tsukidate, Maki Suemitsu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The growth rate and surface hydrogen coverage during Si gas-source molecular beam epitaxy using disilane have been obtained as functions of both the growth temperature and the source-gas pressure. The activation energy of the low-temperature (<600°C) growth rate was found to increase with the source-gas pressure, indicating a contribution by the adsorption process in these low-temperature growth kinetics. Several growth models have been constructed based on the results, among which the two-site/four-site-adsorption model [M. Suemitsu et al., Jpn. J. Appl. Phys., Part 2 36, L625 (1997)] showed the best fit to both the growth rate and the hydrogen coverage.

Original languageEnglish
Pages (from-to)746-748
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number6
DOIs
Publication statusPublished - 2001 Aug 6

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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