Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth

Takeshi Murata; Hideki Nakazawa; Yoshikazu Tsukidate; Maki Suemitsu

doi:10.1063/1.1389768

Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth

Takeshi Murata, Hideki Nakazawa, Yoshikazu Tsukidate, Maki Suemitsu

Information Devices Division

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6 Citations (Scopus)

Abstract

The growth rate and surface hydrogen coverage during Si gas-source molecular beam epitaxy using disilane have been obtained as functions of both the growth temperature and the source-gas pressure. The activation energy of the low-temperature (<600°C) growth rate was found to increase with the source-gas pressure, indicating a contribution by the adsorption process in these low-temperature growth kinetics. Several growth models have been constructed based on the results, among which the two-site/four-site-adsorption model [M. Suemitsu et al., Jpn. J. Appl. Phys., Part 2 36, L625 (1997)] showed the best fit to both the growth rate and the hydrogen coverage.

Original language	English
Pages (from-to)	746-748
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	6
DOIs	https://doi.org/10.1063/1.1389768
Publication status	Published - 2001 Aug 6

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth",

abstract = "The growth rate and surface hydrogen coverage during Si gas-source molecular beam epitaxy using disilane have been obtained as functions of both the growth temperature and the source-gas pressure. The activation energy of the low-temperature (<600°C) growth rate was found to increase with the source-gas pressure, indicating a contribution by the adsorption process in these low-temperature growth kinetics. Several growth models have been constructed based on the results, among which the two-site/four-site-adsorption model [M. Suemitsu et al., Jpn. J. Appl. Phys., Part 2 36, L625 (1997)] showed the best fit to both the growth rate and the hydrogen coverage.",

author = "Takeshi Murata and Hideki Nakazawa and Yoshikazu Tsukidate and Maki Suemitsu",

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T1 - Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy

T2 - In situ observations and detailed modeling of the growth

AU - Murata, Takeshi

AU - Nakazawa, Hideki

AU - Tsukidate, Yoshikazu

AU - Suemitsu, Maki

PY - 2001/8/6

Y1 - 2001/8/6

N2 - The growth rate and surface hydrogen coverage during Si gas-source molecular beam epitaxy using disilane have been obtained as functions of both the growth temperature and the source-gas pressure. The activation energy of the low-temperature (<600°C) growth rate was found to increase with the source-gas pressure, indicating a contribution by the adsorption process in these low-temperature growth kinetics. Several growth models have been constructed based on the results, among which the two-site/four-site-adsorption model [M. Suemitsu et al., Jpn. J. Appl. Phys., Part 2 36, L625 (1997)] showed the best fit to both the growth rate and the hydrogen coverage.

AB - The growth rate and surface hydrogen coverage during Si gas-source molecular beam epitaxy using disilane have been obtained as functions of both the growth temperature and the source-gas pressure. The activation energy of the low-temperature (<600°C) growth rate was found to increase with the source-gas pressure, indicating a contribution by the adsorption process in these low-temperature growth kinetics. Several growth models have been constructed based on the results, among which the two-site/four-site-adsorption model [M. Suemitsu et al., Jpn. J. Appl. Phys., Part 2 36, L625 (1997)] showed the best fit to both the growth rate and the hydrogen coverage.

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Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth

Abstract

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