Abstract
The growth rate and surface hydrogen coverage during Si gas-source molecular beam epitaxy using disilane have been obtained as functions of both the growth temperature and the source-gas pressure. The activation energy of the low-temperature (<600°C) growth rate was found to increase with the source-gas pressure, indicating a contribution by the adsorption process in these low-temperature growth kinetics. Several growth models have been constructed based on the results, among which the two-site/four-site-adsorption model [M. Suemitsu et al., Jpn. J. Appl. Phys., Part 2 36, L625 (1997)] showed the best fit to both the growth rate and the hydrogen coverage.
| Original language | English |
|---|---|
| Pages (from-to) | 746-748 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 79 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2001 Aug 6 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Cite this
Murata, T., Nakazawa, H., Tsukidate, Y., & Suemitsu, M. (2001). Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth. Applied Physics Letters, 79(6), 746-748. https://doi.org/10.1063/1.1389768