TY - JOUR
T1 - Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy
T2 - In situ observations and detailed modeling of the growth
AU - Murata, Takeshi
AU - Nakazawa, Hideki
AU - Tsukidate, Yoshikazu
AU - Suemitsu, Maki
N1 - Copyright:
Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 2001/8/6
Y1 - 2001/8/6
N2 - The growth rate and surface hydrogen coverage during Si gas-source molecular beam epitaxy using disilane have been obtained as functions of both the growth temperature and the source-gas pressure. The activation energy of the low-temperature (<600°C) growth rate was found to increase with the source-gas pressure, indicating a contribution by the adsorption process in these low-temperature growth kinetics. Several growth models have been constructed based on the results, among which the two-site/four-site-adsorption model [M. Suemitsu et al., Jpn. J. Appl. Phys., Part 2 36, L625 (1997)] showed the best fit to both the growth rate and the hydrogen coverage.
AB - The growth rate and surface hydrogen coverage during Si gas-source molecular beam epitaxy using disilane have been obtained as functions of both the growth temperature and the source-gas pressure. The activation energy of the low-temperature (<600°C) growth rate was found to increase with the source-gas pressure, indicating a contribution by the adsorption process in these low-temperature growth kinetics. Several growth models have been constructed based on the results, among which the two-site/four-site-adsorption model [M. Suemitsu et al., Jpn. J. Appl. Phys., Part 2 36, L625 (1997)] showed the best fit to both the growth rate and the hydrogen coverage.
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U2 - 10.1063/1.1389768
DO - 10.1063/1.1389768
M3 - Article
AN - SCOPUS:0039782256
VL - 79
SP - 746
EP - 748
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
ER -