Abstract
Effects of varying the carbon acceptor concentration and/or lowering the temperature on the photoquenchability of the midgap donor EL2 in liquid-encapsulated-Czochralski-grown semi-insulating GaAs have been studied. The EL2 photoquenching effect was found to be more enhanced at lower temperatures and for samples with higher carbon concentrations. A unified understanding is given for these phenomena by assuming an acceptor level located at 70-80meV above the valence band, whose charge state controls the transitions to and from the metastable state.
| Original language | English |
|---|---|
| Pages (from-to) | 1037-1042 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 196-201 |
| Issue number | pt 2 |
| Publication status | Published - 1995 |
| Externally published | Yes |
| Event | Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Duration: 1995 Jul 23 → 1995 Jul 28 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering