Role of a 70-80 meV acceptor in the photoquenching of EL2

M. Suemitsu, H. Takahashi, Y. Sagae, N. Miyamoto

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

Effects of varying the carbon acceptor concentration and/or lowering the temperature on the photoquenchability of the midgap donor EL2 in liquid-encapsulated-Czochralski-grown semi-insulating GaAs have been studied. The EL2 photoquenching effect was found to be more enhanced at lower temperatures and for samples with higher carbon concentrations. A unified understanding is given for these phenomena by assuming an acceptor level located at 70-80meV above the valence band, whose charge state controls the transitions to and from the metastable state.

Original languageEnglish
Pages (from-to)1037-1042
Number of pages6
JournalMaterials Science Forum
Volume196-201
Issue numberpt 2
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: 1995 Jul 231995 Jul 28

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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