TY - JOUR
T1 - Robust Single-Shot Spin Measurement with 99.5% Fidelity in a Quantum Dot Array
AU - Nakajima, Takashi
AU - Delbecq, Matthieu R.
AU - Otsuka, Tomohiro
AU - Stano, Peter
AU - Amaha, Shinichi
AU - Yoneda, Jun
AU - Noiri, Akito
AU - Kawasaki, Kento
AU - Takeda, Kenta
AU - Allison, Giles
AU - Ludwig, Arne
AU - Wieck, Andreas D.
AU - Loss, Daniel
AU - Tarucha, Seigo
N1 - Funding Information:
This work is financially supported by CREST, JST (JPMJCR15N2, JPMJCR1675), the ImPACT Program of Council for Science, Technology and Innovation (Cabinet Office, Government of Japan). T.N., T.O., and J.Y. acknowledge financial support from RIKEN Incentive Research Projects. P.S. acknowledges financial support from JSPS KAKENHI Grant No.16K05411. T.O. acknowledges financial support from PRESTO, JST (JPMJPR16N3), JSPS KAKENHI Grants No.17H05187 and No.16H00817, Yazaki Memorial Foundation for Science and Technology Research Grant, Advanced Technology Institute Research Grant, the Murata Science Foundation Research Grant, Izumi Science and Technology Foundation Research Grant, TEPCO Memorial Foundation Research Grant, The Thermal & Electric Energy Technology Foundation Research Grant, Futaba Electronics Memorial Foundation Research Grant, MST Foundation Research Grant. A.N. acknowledges support from Advanced Leading Graduate Course for Photon Science (ALPS). S.T. acknowledges financial support by JSPS KAKENHI Grants No.26220710 and No.JP16H02204. A.L. and A.D.W. acknowledge gratefully support of Mercur Pr-2013-0001, DFG-TRR160, BMBF-Q.com-H 16KIS0109, and the DFH/UFA CDFA-05-06.
Publisher Copyright:
© 2017 American Physical Society.
PY - 2017/7/6
Y1 - 2017/7/6
N2 - We demonstrate a new method for projective single-shot measurement of two electron spin states (singlet versus triplet) in an array of gate-defined lateral quantum dots in GaAs. The measurement has very high fidelity and is robust with respect to electric and magnetic fluctuations in the environment. It exploits a long-lived metastable charge state, which increases both the contrast and the duration of the charge signal distinguishing the two measurement outcomes. This method allows us to evaluate the charge measurement error and the spin-to-charge conversion error separately. We specify conditions under which this method can be used, and project its general applicability to scalable quantum dot arrays in GaAs or silicon.
AB - We demonstrate a new method for projective single-shot measurement of two electron spin states (singlet versus triplet) in an array of gate-defined lateral quantum dots in GaAs. The measurement has very high fidelity and is robust with respect to electric and magnetic fluctuations in the environment. It exploits a long-lived metastable charge state, which increases both the contrast and the duration of the charge signal distinguishing the two measurement outcomes. This method allows us to evaluate the charge measurement error and the spin-to-charge conversion error separately. We specify conditions under which this method can be used, and project its general applicability to scalable quantum dot arrays in GaAs or silicon.
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U2 - 10.1103/PhysRevLett.119.017701
DO - 10.1103/PhysRevLett.119.017701
M3 - Article
C2 - 28731737
AN - SCOPUS:85022179255
VL - 119
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 1
M1 - 017701
ER -