Robust Si wafer

Xinming Huang, Tsuyoshi Sato, Masami Nakanishi, Toshinori Taishi, Keigo Hoshikawa, Satoshi Uda

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Heavily B- and Ge-codoped Si wafers with and without swirl defects have been characterized in comparison with lightly B-doped and heavily B-doped Si wafers (with and without swirl defects) as references. It was found that only very few slip dislocations could be observed in the heavily B- and Ge-codoped (1019 atoms/cm3) Si wafers whereas many slip dislocations were observed in both the heavily B-doped (1019 atoms/cm3) and the lightly B-doped (1015 atoms/cm3) reference wafers, after the same heat treatment had been carried out. On the other hand, much more slip dislocations occurred in the heavily B-doped Si wafers with swirl defects in comparison with that in the heavily B-doped Si wafers without swirl defects. The fact that almost no slip dislocations occurred in the heavily B- and Ge-codoped Si wafers in spite of swirl defects existing indicated that heavy B and Ge codoping in Si wafers had an effect on suppressing dislocation generation as well as suppressing generated dislocations propagating. This indicates that heavily B- and Ge-codoped Si wafers have the highest resistance to thermal stress, and are thus called robust Si wafers.

Original languageEnglish
Pages (from-to)e401-e407
JournalJournal of Crystal Growth
Volume275
Issue number1-2
DOIs
Publication statusPublished - 2005 Feb 15

Keywords

  • A1. B and Ge codoping
  • A1. Slip dislocation
  • A1. Swirl defects
  • A1. Thermal shock
  • B2. Si wafer

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Huang, X., Sato, T., Nakanishi, M., Taishi, T., Hoshikawa, K., & Uda, S. (2005). Robust Si wafer. Journal of Crystal Growth, 275(1-2), e401-e407. https://doi.org/10.1016/j.jcrysgro.2004.11.010