Abstract
The Sb surface segregation during Si molecular beam epitaxy (MBE) on a Sb-saturated Si(0 0 1) surface has been investigated by the simultaneous usage of reflection high-energy electron diffraction and Auger electron spectroscopy (RHEED-AES). From a quantitative analysis of Sb MNN Auger electron spectra as excited by a grazing-incidence electron beam for RHEED, the Sb bulk incorporation rate, k, and the Sb surface coverage, ΘSb, during the initial Si MBE growth were evaluated as a function of the substrate temperature Ts. The temperature dependence of k, and ΘSb suggests that the Sb surface segregation kinetics are divided into three temperature regions: (I) Ts < ∼500°C, (II) ∼500°C < Ts < ∼700°C and (III) ∼700°C < Ts. k decreases with increase in Ts in region I whereas k increases with Ts in region II. k also shows long-time-scale decrease with growth time for the regions I and II. These findings are explained in terms of Sb diffusion through MBE Si layers and the crystallinity of the MBE Si layers.
Original language | English |
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Pages (from-to) | 95-103 |
Number of pages | 9 |
Journal | Journal of Crystal Growth |
Volume | 186 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1998 Mar 1 |
Keywords
- AES
- MBE
- RHEED
- Sb
- Segregation
- Si(0 0 1)
- Surfactant
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry