RHEED-AES observation of Sb surface segregation during Sb-mediated Si MBE on Si(0 0 1)

Ki Seon Kim, Yuji Takakuwa, Tadashi Abukawa, Shozo Kono

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16 Citations (Scopus)


The Sb surface segregation during Si molecular beam epitaxy (MBE) on a Sb-saturated Si(0 0 1) surface has been investigated by the simultaneous usage of reflection high-energy electron diffraction and Auger electron spectroscopy (RHEED-AES). From a quantitative analysis of Sb MNN Auger electron spectra as excited by a grazing-incidence electron beam for RHEED, the Sb bulk incorporation rate, k, and the Sb surface coverage, ΘSb, during the initial Si MBE growth were evaluated as a function of the substrate temperature Ts. The temperature dependence of k, and ΘSb suggests that the Sb surface segregation kinetics are divided into three temperature regions: (I) Ts < ∼500°C, (II) ∼500°C < Ts < ∼700°C and (III) ∼700°C < Ts. k decreases with increase in Ts in region I whereas k increases with Ts in region II. k also shows long-time-scale decrease with growth time for the regions I and II. These findings are explained in terms of Sb diffusion through MBE Si layers and the crystallinity of the MBE Si layers.

Original languageEnglish
Pages (from-to)95-103
Number of pages9
JournalJournal of Crystal Growth
Issue number1-2
Publication statusPublished - 1998 Mar 1


  • AES
  • MBE
  • Sb
  • Segregation
  • Si(0 0 1)
  • Surfactant

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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