RF responses of double-junction SQUID models

Y. Mizugaki, J. Chen, K. Nakajima, T. Yamashita

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

We present numerical investigation of the RF properties of a double-junction SQUID model, which is referred to as an RF-field-driven double-junction SQUID (RFDS). The RFDS generates large current steps, the order of which can be controlled by external dc field. We simulate the current-voltage characteristics of the RFDS in the normalized frequency range from 0.065 to 5.0. In comparison with the results for a single junction, the step heights of the RFDS are much larger for the low frequency region; e.g. the first step of the RFDS becomes nine times larger than that of a single junction when a dc flux of 0.5φ0 is applied (φ0 is a flux quantum). For the high frequency region, the step height of the RFDS is comparable to that of a single junction. The results suggest that the RFDS should be applicable as a wide-band RF detector.

Original languageEnglish
Pages (from-to)992-994
Number of pages3
JournalSuperconductor Science and Technology
Volume12
Issue number11
DOIs
Publication statusPublished - 1999 Nov
EventProceedings of the 1999 International Superconductive Electronics Conference - Berkeley, CA, USA
Duration: 1999 Jun 211999 Jun 25

ASJC Scopus subject areas

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'RF responses of double-junction SQUID models'. Together they form a unique fingerprint.

Cite this