Abstract
We present numerical investigation of the RF properties of a double-junction SQUID model, which is referred to as an RF-field-driven double-junction SQUID (RFDS). The RFDS generates large current steps, the order of which can be controlled by external dc field. We simulate the current-voltage characteristics of the RFDS in the normalized frequency range from 0.065 to 5.0. In comparison with the results for a single junction, the step heights of the RFDS are much larger for the low frequency region; e.g. the first step of the RFDS becomes nine times larger than that of a single junction when a dc flux of 0.5φ0 is applied (φ0 is a flux quantum). For the high frequency region, the step height of the RFDS is comparable to that of a single junction. The results suggest that the RFDS should be applicable as a wide-band RF detector.
Original language | English |
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Pages (from-to) | 992-994 |
Number of pages | 3 |
Journal | Superconductor Science and Technology |
Volume | 12 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1999 Nov |
Event | Proceedings of the 1999 International Superconductive Electronics Conference - Berkeley, CA, USA Duration: 1999 Jun 21 → 1999 Jun 25 |
ASJC Scopus subject areas
- Ceramics and Composites
- Condensed Matter Physics
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry