RF responses of double-junction SQUID models

Y. Mizugaki; J. Chen; K. Nakajima; T. Yamashita

doi:10.1088/0953-2048/12/11/388

RF responses of double-junction SQUID models

Y. Mizugaki, J. Chen, K. Nakajima, T. Yamashita

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

We present numerical investigation of the RF properties of a double-junction SQUID model, which is referred to as an RF-field-driven double-junction SQUID (RFDS). The RFDS generates large current steps, the order of which can be controlled by external dc field. We simulate the current-voltage characteristics of the RFDS in the normalized frequency range from 0.065 to 5.0. In comparison with the results for a single junction, the step heights of the RFDS are much larger for the low frequency region; e.g. the first step of the RFDS becomes nine times larger than that of a single junction when a dc flux of 0.5φ₀ is applied (φ₀ is a flux quantum). For the high frequency region, the step height of the RFDS is comparable to that of a single junction. The results suggest that the RFDS should be applicable as a wide-band RF detector.

Original language	English
Pages (from-to)	992-994
Number of pages	3
Journal	Superconductor Science and Technology
Volume	12
Issue number	11
DOIs	https://doi.org/10.1088/0953-2048/12/11/388
Publication status	Published - 1999 Nov
Event	Proceedings of the 1999 International Superconductive Electronics Conference - Berkeley, CA, USA Duration: 1999 Jun 21 → 1999 Jun 25

ASJC Scopus subject areas

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/0953-2048/12/11/388

Cite this

@article{8a91e5df4d12437385c91350fafbe956,

title = "RF responses of double-junction SQUID models",

abstract = "We present numerical investigation of the RF properties of a double-junction SQUID model, which is referred to as an RF-field-driven double-junction SQUID (RFDS). The RFDS generates large current steps, the order of which can be controlled by external dc field. We simulate the current-voltage characteristics of the RFDS in the normalized frequency range from 0.065 to 5.0. In comparison with the results for a single junction, the step heights of the RFDS are much larger for the low frequency region; e.g. the first step of the RFDS becomes nine times larger than that of a single junction when a dc flux of 0.5φ0 is applied (φ0 is a flux quantum). For the high frequency region, the step height of the RFDS is comparable to that of a single junction. The results suggest that the RFDS should be applicable as a wide-band RF detector.",

author = "Y. Mizugaki and J. Chen and K. Nakajima and T. Yamashita",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1999 International Superconductive Electronics Conference ; Conference date: 21-06-1999 Through 25-06-1999",

year = "1999",

month = nov,

doi = "10.1088/0953-2048/12/11/388",

language = "English",

volume = "12",

pages = "992--994",

journal = "Superconductor Science and Technology",

issn = "0953-2048",

publisher = "IOP Publishing Ltd.",

number = "11",

}

TY - JOUR

T1 - RF responses of double-junction SQUID models

AU - Mizugaki, Y.

AU - Chen, J.

AU - Nakajima, K.

AU - Yamashita, T.

PY - 1999/11

Y1 - 1999/11

N2 - We present numerical investigation of the RF properties of a double-junction SQUID model, which is referred to as an RF-field-driven double-junction SQUID (RFDS). The RFDS generates large current steps, the order of which can be controlled by external dc field. We simulate the current-voltage characteristics of the RFDS in the normalized frequency range from 0.065 to 5.0. In comparison with the results for a single junction, the step heights of the RFDS are much larger for the low frequency region; e.g. the first step of the RFDS becomes nine times larger than that of a single junction when a dc flux of 0.5φ0 is applied (φ0 is a flux quantum). For the high frequency region, the step height of the RFDS is comparable to that of a single junction. The results suggest that the RFDS should be applicable as a wide-band RF detector.

AB - We present numerical investigation of the RF properties of a double-junction SQUID model, which is referred to as an RF-field-driven double-junction SQUID (RFDS). The RFDS generates large current steps, the order of which can be controlled by external dc field. We simulate the current-voltage characteristics of the RFDS in the normalized frequency range from 0.065 to 5.0. In comparison with the results for a single junction, the step heights of the RFDS are much larger for the low frequency region; e.g. the first step of the RFDS becomes nine times larger than that of a single junction when a dc flux of 0.5φ0 is applied (φ0 is a flux quantum). For the high frequency region, the step height of the RFDS is comparable to that of a single junction. The results suggest that the RFDS should be applicable as a wide-band RF detector.

UR - http://www.scopus.com/inward/record.url?scp=0033226221&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033226221&partnerID=8YFLogxK

U2 - 10.1088/0953-2048/12/11/388

DO - 10.1088/0953-2048/12/11/388

M3 - Conference article

AN - SCOPUS:0033226221

VL - 12

SP - 992

EP - 994

JO - Superconductor Science and Technology

JF - Superconductor Science and Technology

SN - 0953-2048

IS - 11

T2 - Proceedings of the 1999 International Superconductive Electronics Conference

Y2 - 21 June 1999 through 25 June 1999

ER -

RF responses of double-junction SQUID models

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this