TY - JOUR
T1 - RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO(0 0 1) substrates
AU - Kakuda, M.
AU - Kuboya, S.
AU - Onabe, K.
N1 - Funding Information:
XRD measurements were performed using facilities of the Institute for Solid State Physics, the University of Tokyo. This work is partly supported by Grants-in-Aid for Scientific Research (B) No. 22360005 from The Ministry of Education, Culture, Sports, Science and Technology .
PY - 2011/5/15
Y1 - 2011/5/15
N2 - Silicon doped cubic GaN (c-GaN) films were grown on MgO (0 0 1) substrates by radio-frequency-plasma-assisted molecular beam epitaxy (RF-MBE). And the incorporation of hexagonal phase into cubic AlGaN (c-AlGaN) films was examined. The conduction type of the Si doped c-GaN and c-AlGaN films was n-type. The maximum electron concentration was 2.8×1020 cm-3 for c-GaN and 1.3×1020 cm-3 for c-AlGaN (Al content of 710% and hexagonal phase of about 30%). The cubic phase purity of the films was maintained near the value of undoped films of the same Al content. The maximum electron mobility was 27 cm2/V s for c-GaN and electron mobility decreased as the cubic phase purity of the film decreases. The main cause of electron scattering is the stacking faults associated with the hexagonal phase incorporation.
AB - Silicon doped cubic GaN (c-GaN) films were grown on MgO (0 0 1) substrates by radio-frequency-plasma-assisted molecular beam epitaxy (RF-MBE). And the incorporation of hexagonal phase into cubic AlGaN (c-AlGaN) films was examined. The conduction type of the Si doped c-GaN and c-AlGaN films was n-type. The maximum electron concentration was 2.8×1020 cm-3 for c-GaN and 1.3×1020 cm-3 for c-AlGaN (Al content of 710% and hexagonal phase of about 30%). The cubic phase purity of the films was maintained near the value of undoped films of the same Al content. The maximum electron mobility was 27 cm2/V s for c-GaN and electron mobility decreased as the cubic phase purity of the film decreases. The main cause of electron scattering is the stacking faults associated with the hexagonal phase incorporation.
KW - Crystal structure
KW - High resolution X-ray diffraction
KW - Molecular beam epitaxy
KW - Nitrides
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U2 - 10.1016/j.jcrysgro.2010.12.035
DO - 10.1016/j.jcrysgro.2010.12.035
M3 - Article
AN - SCOPUS:79957986077
VL - 323
SP - 91
EP - 94
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -