RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO(0 0 1) substrates

M. Kakuda, Shigeyuki Kuboya, K. Onabe

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Silicon doped cubic GaN (c-GaN) films were grown on MgO (0 0 1) substrates by radio-frequency-plasma-assisted molecular beam epitaxy (RF-MBE). And the incorporation of hexagonal phase into cubic AlGaN (c-AlGaN) films was examined. The conduction type of the Si doped c-GaN and c-AlGaN films was n-type. The maximum electron concentration was 2.8×1020 cm-3 for c-GaN and 1.3×1020 cm-3 for c-AlGaN (Al content of 710% and hexagonal phase of about 30%). The cubic phase purity of the films was maintained near the value of undoped films of the same Al content. The maximum electron mobility was 27 cm2/V s for c-GaN and electron mobility decreased as the cubic phase purity of the film decreases. The main cause of electron scattering is the stacking faults associated with the hexagonal phase incorporation.

Original languageEnglish
Pages (from-to)91-94
Number of pages4
JournalJournal of Crystal Growth
Volume323
Issue number1
DOIs
Publication statusPublished - 2011 May 15
Externally publishedYes

Keywords

  • Crystal structure
  • High resolution X-ray diffraction
  • Molecular beam epitaxy
  • Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

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