RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer

Susurnu Nishio, A. Nishikawa, R. Katayama, K. Onabe, Y. Shhki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InAs1-xNx epilayers even with x=0.0353 were successhlly grown on GaAs (001) substrates by using the ∼0.8μm thick InAs buffer layer. The N concentration was well controlled by altering Tg between 420°C and 510°C. With decreasing Tg the N concentration of the InAsN layer increased. The cross-sectional SEM and AFM images indicate that the fairly flat surface and interface of InAsN epilayer were obtained.

Original languageEnglish
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages147-148
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
Publication statusPublished - 2002 Jan 1
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: 2002 Sep 152002 Sep 20

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period02/9/1502/9/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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