TY - GEN
T1 - RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer
AU - Nishio, Susurnu
AU - Nishikawa, A.
AU - Katayama, R.
AU - Onabe, K.
AU - Shhki, Y.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - InAs1-xNx epilayers even with x=0.0353 were successhlly grown on GaAs (001) substrates by using the ∼0.8μm thick InAs buffer layer. The N concentration was well controlled by altering Tg between 420°C and 510°C. With decreasing Tg the N concentration of the InAsN layer increased. The cross-sectional SEM and AFM images indicate that the fairly flat surface and interface of InAsN epilayer were obtained.
AB - InAs1-xNx epilayers even with x=0.0353 were successhlly grown on GaAs (001) substrates by using the ∼0.8μm thick InAs buffer layer. The N concentration was well controlled by altering Tg between 420°C and 510°C. With decreasing Tg the N concentration of the InAsN layer increased. The cross-sectional SEM and AFM images indicate that the fairly flat surface and interface of InAsN epilayer were obtained.
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U2 - 10.1109/MBE.2002.1037802
DO - 10.1109/MBE.2002.1037802
M3 - Conference contribution
AN - SCOPUS:84968610505
T3 - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
SP - 147
EP - 148
BT - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th International Conference on Molecular Beam Epitaxy, MBE 2002
Y2 - 15 September 2002 through 20 September 2002
ER -