RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer

Susurnu Nishio; A. Nishikawa; R. Katayama; K. Onabe; Y. Shhki

doi:10.1109/MBE.2002.1037802

RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer

Susurnu Nishio, A. Nishikawa, R. Katayama, K. Onabe, Y. Shhki

Materials Design Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InAs_1-xN_x epilayers even with x=0.0353 were successhlly grown on GaAs (001) substrates by using the ∼0.8μm thick InAs buffer layer. The N concentration was well controlled by altering T_g between 420°C and 510°C. With decreasing T_g the N concentration of the InAsN layer increased. The cross-sectional SEM and AFM images indicate that the fairly flat surface and interface of InAsN epilayer were obtained.

Original language	English
Title of host publication	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	147-148
Number of pages	2
ISBN (Electronic)	0780375815, 9780780375819
DOIs	https://doi.org/10.1109/MBE.2002.1037802
Publication status	Published - 2002 Jan 1
Event	12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: 2002 Sep 15 → 2002 Sep 20

Publication series

Name	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other	12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/Territory	United States
City	San Francisco
Period	02/9/15 → 02/9/20

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/MBE.2002.1037802

Cite this

Nishio, S., Nishikawa, A., Katayama, R., Onabe, K., & Shhki, Y. (2002). RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 147-148). [1037802] (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037802

RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer. / Nishio, Susurnu; Nishikawa, A.; Katayama, R.; Onabe, K.; Shhki, Y.

MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 147-148 1037802 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nishio, S, Nishikawa, A, Katayama, R, Onabe, K & Shhki, Y 2002, RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037802, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy, Institute of Electrical and Electronics Engineers Inc., pp. 147-148, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 02/9/15. https://doi.org/10.1109/MBE.2002.1037802

Nishio S, Nishikawa A, Katayama R, Onabe K, Shhki Y. RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc. 2002. p. 147-148. 1037802. (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). https://doi.org/10.1109/MBE.2002.1037802

Nishio, Susurnu ; Nishikawa, A. ; Katayama, R. ; Onabe, K. ; Shhki, Y. / RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer. MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 147-148 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

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abstract = "InAs1-xNx epilayers even with x=0.0353 were successhlly grown on GaAs (001) substrates by using the ∼0.8μm thick InAs buffer layer. The N concentration was well controlled by altering Tg between 420°C and 510°C. With decreasing Tg the N concentration of the InAsN layer increased. The cross-sectional SEM and AFM images indicate that the fairly flat surface and interface of InAsN epilayer were obtained.",

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N2 - InAs1-xNx epilayers even with x=0.0353 were successhlly grown on GaAs (001) substrates by using the ∼0.8μm thick InAs buffer layer. The N concentration was well controlled by altering Tg between 420°C and 510°C. With decreasing Tg the N concentration of the InAsN layer increased. The cross-sectional SEM and AFM images indicate that the fairly flat surface and interface of InAsN epilayer were obtained.

AB - InAs1-xNx epilayers even with x=0.0353 were successhlly grown on GaAs (001) substrates by using the ∼0.8μm thick InAs buffer layer. The N concentration was well controlled by altering Tg between 420°C and 510°C. With decreasing Tg the N concentration of the InAsN layer increased. The cross-sectional SEM and AFM images indicate that the fairly flat surface and interface of InAsN epilayer were obtained.

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RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer

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