RF-MBE growth of InAsN layers on GaAs (0 0 1) substrates using a thick InAs buffer layer

Susumu Nishio, Atsushi Nishikawa, Ryuji Katayama, Kentaro Onabe, Yasuhiro Shiraki

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)

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Engineering & Materials Science

Chemical Compounds

Physics & Astronomy