RF-MBE growth of InAsN layers on GaAs (0 0 1) substrates using a thick InAs buffer layer

Susumu Nishio, Atsushi Nishikawa, Ryuji Katayama, Kentaro Onabe, Yasuhiro Shiraki

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)


The InAsN epilayers have been successfully grown on GaAs (0 0 1) substrates with a ∼ 0.8-μm-thick InAs buffer layer by radio-frequency plasma-source molecular beam epitaxy. A series of samples obtained at different growth temperatures have been analyzed by high-resolution X-ray diffraction and atomic force microscopy to characterize the structural properties. The strain and the nitrogen concentration of the InAsN epilayers grown on InAs (0 0 1) substrates have also been evaluated for application to those on the InAs buffer layer on the GaAs substrates. The maximum nitrogen concentration of the epilayers grown on the GaAs substrate was estimated to be 1.62% when the growth temperature was 420°C.

Original languageEnglish
Pages (from-to)422-426
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 2003 Apr 1
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: 2002 Sep 152002 Sep 20


  • A1. High resolution X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B2. Semiconducting indium compounds
  • B2. Semiconducting ternary compounds
  • B3. Infrared devices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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