RF-MBE growth of cubic InN films on YSZ(001) vicinal substrates

T. Nakamura, T. Kataoka, Ryuji Katayama, T. Yamamoto, K. Onabe

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3 Citations (Scopus)


Cubic InN (zincblende structure) films have been directly grown on yttria-stabilized zirconia (YSZ) (001)-oriented and vicinal substrates by rf-plasma-assisted molecular beam epitaxy (RF-MBE) (The vicinal substrates are misoriented by 1° toward 〈110〉.), and structurally characterized by X-ray diffraction and atomic force microscopy. Compared with the growth on the (001)-oriented substrate, the surface grain size of the cubic InN film is remarkably large for the growth on the vicinal substrates. From the 2θ/ω and ω X-ray reciprocal space mapping measurements, hexagonal InN is found to be preferentially generated on the c-InN{111} facets. By using the YSZ(001) vicinal substrate, the hexagonal phase incorporation ratio decreased from 16.3% on the (001)-oriented substrate to 11.7% with the same growth condition. And on the vicinal substrate, hexagonal InN is generated predominantly from the c-InN(111) facets which are inclined to the upward direction of the atomic steps.

Original languageEnglish
Pages (from-to)1712-1714
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number6
Publication statusPublished - 2008 Dec 1
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 2007 Sep 162007 Sep 21

ASJC Scopus subject areas

  • Condensed Matter Physics


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