RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer

M. Kakuda, S. Morikawa, Shigeyuki Kuboya, R. Katayama, H. Yaguchi, K. Onabe

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We fabricated cubic AlN (c-AlN) films on MgO (001) substrates via 2-step c-GaN buffer layer by radio-frequency-plasma-assisted molecular beam epitaxy (RF-MBE). The effect of low temperature c-GaN buffer layer on the surface flatness and crystal quality of c-AlN was investigated by AFM and XRD reciprocal space mapping analysis. We examined optical properties of the c-AlN film by spectroscopic ellipsometry. The absorption edge by the direct transition of the c-AlN film was 5.95 eV caused by the hexagonal phase incorporation.

Original languageEnglish
Pages (from-to)307-309
Number of pages3
JournalJournal of Crystal Growth
Volume378
DOIs
Publication statusPublished - 2013 Jan 1
Externally publishedYes

Keywords

  • Crystal structure
  • High resolution X-ray diffraction
  • Molecular beam epitaxy
  • Nitrides
  • Reflection high energy electron diffraction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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