RF-magnetron-sputtered heteroepitaxial YSZ and CeO2/YSZ/Si(0 0 1) thin films with improved capacitance-voltage characteristics

Naoki Wakiya, Makoto Yoshida, Takanori Kiguchi, Kazuo Shinozaki, Nobuyasu Mizutani

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

Heteroepitaxial yttria-stabilized zirconia (YSZ) and CeO2/YSZ thin films were prepared on Si(0 0 1) by radio frequency (RF)-magnetron sputtering using a combination of metal (Zr + Y), YSZ ceramic and CeO 2 ceramic targets. Optimal crystallinity and minimal surface roughness were obtained for a 2-nm thick layer of metallic (Zr + Y). For YSZ thin film, a considerably large threshold hysteresis (memory window) of approximately 2.2 V was observed in the capacitance-voltage characteristics. It was clarified that the memory window can be suppressed by decreasing the thickness of YSZ. The memory window of CeO2(90 nm thick)/YSZ(5 nm thick) thin film was reduced to 0.4 V.

Original languageEnglish
Pages (from-to)268-273
Number of pages6
JournalThin Solid Films
Volume411
Issue number2
DOIs
Publication statusPublished - 2002 Dec 1
Externally publishedYes

Keywords

  • C-V measurements
  • CeO
  • Heteroepitaxial
  • Radio frequency sputtering
  • Yttria-stabilized zirconia

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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