Abstract
In this paper, we report a new structure of a shear horizontal (SH) type boundary acoustic wave for cellular phone applications. Such a structure composed of electrodes with a low shear wave velocity between two materials, namely, the SiO2 film/Au-electrode/LiNbO3 substrate, is proposed. The ladder filter used in this paper had this structure. By changing the propagation angle of the acoustic wave, the electromechanical coupling factor k2 range from 0 to 16% was obtained, as well as a normalized bandwidth range 0.67 to 1.85 fold as large as that of a 36-46°Y-X LiTaO 3 leaky surface acoustic wave (LT-LSAW) filter. In addition, an excellent temperature coefficient of delay time (TCP = 25 ppm/°C) and a large mutual coupling coefficient κ12 (= 0.15) were also obtained.
Original language | English |
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Pages (from-to) | 4651-4654 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 45 |
Issue number | 5 B |
DOIs | |
Publication status | Published - 2006 May 25 |
Externally published | Yes |
Keywords
- Boundary acoustic wave
- Electromechanical coupling factor adustment
- Power flow angle
- RF filter
- SH wave
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)