Authors report a new structure of a shear horizontal (SH) type boundary acoustic wave for cellular phone applications. Such a structure composed of electrodes with a low shear wave velocity between two materials, namely, the SiO2 film/high density electrode/LiNbO3 substrate, is proposed. The unique feature of this structure is that it does not require a cavity on the substrate surface. The ladder filter and the longitudinal coupled multiple mode filter composed of this structure is reported. By changing the propagation angle of the acoustic wave, the electromechanical coupling factor k2 ranged from 0 to 16% as well as a normalized bandwidth of 0.67 to 1.85 fold as large as that of a 36-46° Y-X LiTaO3 leaky surface acoustic wave (LT-LSAW) filter. In addition, an excellent temperature coefficient of delay time (TCD=25 ppm/°C) and a large mutual coupling coefficient κ12 (=0.15) were also obtained. The newly developed RF filter using this structure was very small and thin.