Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping

Yuan Ming Chang, Shih Hsien Yang, Che Yi Lin, Chang Hung Chen, Chen Hsin Lien, Wen Bin Jian, Keiji Ueno, Yuen Wuu Suen, Kazuhito Tsukagoshi, Yen Fu Lin

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)


Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe2) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe2, E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance.

Original languageEnglish
Article number1706995
JournalAdvanced Materials
Issue number13
Publication statusPublished - 2018 Mar 27
Externally publishedYes


  • 2D electronics
  • MoTe
  • doping
  • logic circuits
  • transition metal dichalcogenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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