Reversible and irreversible degradation attributing to oxygen vacancy in HfSiON gate films during electrical stress application

Ryu Hasunuma, Chihiro Tamura, Tsuyoshi Nomura, Yuuki Kikuchi, Kenji Ohmori, Motoyuki Sato, Akira Uedono, Toyohiro Chikyow, Kenji Shiraishi, Keisaku Yamada, Kikuo Yamabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The dielectric degradation under electrical stress application was attributed to generation of oxygen vacancy, and structural transformation in HfSiON films, in addition to widely known charge trapping. The former two result from ion drift under electrical field due to its ionic character of Hf-based dielectrics. While Vo generation and charge trapping are atomic-range phenomena, it is surprising that long-range structural transformation can also occur under electrical filed before dielectric breakdown even at room temperature.

Original languageEnglish
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
DOIs
Publication statusPublished - 2009 Dec 1
Externally publishedYes
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: 2009 Dec 72009 Dec 9

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period09/12/709/12/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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