Retention of hydrogen implanted into SiC single crystals

Shinji Nagata, S. Yamaguchi, Y. Fujino, M. Hirabayashi, K. Kamada

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

By means of the elastic recoil detection (ERD) analysis technique, H and D concentration distributions in SiC single crystals implanted with 13 keV H+ and 10 keV D+ were measured. The profiles obtained were compared with simulated range profiles as well as defect distributions created during the implantation. The thermal release of D retained in the crystal was studied by isochronal annealing up to 1200 °C. The binding energy of D in SiC was estimated to be 4.0±0.2 eV.

Original languageEnglish
Pages (from-to)760-763
Number of pages4
JournalJournal of Nuclear Materials
Volume128-129
Issue numberC
DOIs
Publication statusPublished - 1984 Jan 1

Keywords

  • SiC
  • deuterium
  • hydrogen
  • retention
  • thermal release

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Materials Science(all)

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