Retention of hydrogen implanted into SiC single crystals

Shinji Nagata; S. Yamaguchi; Y. Fujino; M. Hirabayashi; K. Kamada

doi:10.1016/0022-3115(84)90453-7

Retention of hydrogen implanted into SiC single crystals

Shinji Nagata, S. Yamaguchi, Y. Fujino, M. Hirabayashi, K. Kamada

Materials Design Division

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

By means of the elastic recoil detection (ERD) analysis technique, H and D concentration distributions in SiC single crystals implanted with 13 keV H⁺ and 10 keV D⁺ were measured. The profiles obtained were compared with simulated range profiles as well as defect distributions created during the implantation. The thermal release of D retained in the crystal was studied by isochronal annealing up to 1200 °C. The binding energy of D in SiC was estimated to be 4.0±0.2 eV.

Original language	English
Pages (from-to)	760-763
Number of pages	4
Journal	Journal of Nuclear Materials
Volume	128-129
Issue number	C
DOIs	https://doi.org/10.1016/0022-3115(84)90453-7
Publication status	Published - 1984 Jan 1

Keywords

SiC
deuterium
hydrogen
retention
thermal release

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Materials Science(all)

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title = "Retention of hydrogen implanted into SiC single crystals",

abstract = "By means of the elastic recoil detection (ERD) analysis technique, H and D concentration distributions in SiC single crystals implanted with 13 keV H+ and 10 keV D+ were measured. The profiles obtained were compared with simulated range profiles as well as defect distributions created during the implantation. The thermal release of D retained in the crystal was studied by isochronal annealing up to 1200 °C. The binding energy of D in SiC was estimated to be 4.0±0.2 eV.",

keywords = "SiC, deuterium, hydrogen, retention, thermal release",

author = "Shinji Nagata and S. Yamaguchi and Y. Fujino and M. Hirabayashi and K. Kamada",

year = "1984",

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language = "English",

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pages = "760--763",

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T1 - Retention of hydrogen implanted into SiC single crystals

AU - Nagata, Shinji

AU - Yamaguchi, S.

AU - Fujino, Y.

AU - Hirabayashi, M.

AU - Kamada, K.

PY - 1984/1/1

Y1 - 1984/1/1

N2 - By means of the elastic recoil detection (ERD) analysis technique, H and D concentration distributions in SiC single crystals implanted with 13 keV H+ and 10 keV D+ were measured. The profiles obtained were compared with simulated range profiles as well as defect distributions created during the implantation. The thermal release of D retained in the crystal was studied by isochronal annealing up to 1200 °C. The binding energy of D in SiC was estimated to be 4.0±0.2 eV.

AB - By means of the elastic recoil detection (ERD) analysis technique, H and D concentration distributions in SiC single crystals implanted with 13 keV H+ and 10 keV D+ were measured. The profiles obtained were compared with simulated range profiles as well as defect distributions created during the implantation. The thermal release of D retained in the crystal was studied by isochronal annealing up to 1200 °C. The binding energy of D in SiC was estimated to be 4.0±0.2 eV.

KW - SiC

KW - deuterium

KW - hydrogen

KW - retention

KW - thermal release

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