Restructuring of memory layer in electrical system and its novel evolution with nonvolatile logic

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Future semiconductor memories must increase its memory capacity while increasing operation speed and decreasing power consumption. Especially from the perspective of decreasing the power consumption of the system, the improvement in performance of nonvolatile memories is in strong demand. From this background, we introduce novel types of nonvolatile semiconductor memory, which uses storage information other than the conventional charge of the electrons and we also introduce the progress of stacked type vertical NAND type memories for large data capacity. In addition, from the perspective of super low power consumption systems, we discuss the trend of nonvolatile logic, which combine Spintronic devices with semiconductor CMOS logic in order to realize higher level of low power system.

Original languageEnglish
Title of host publicationULSI Process Integration 7
Pages59-70
Number of pages12
Edition7
DOIs
Publication statusPublished - 2011
Event7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 92011 Oct 14

Publication series

NameECS Transactions
Number7
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other7th Symposium on ULSI Process Integration - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/911/10/14

ASJC Scopus subject areas

  • Engineering(all)

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    Endoh, T. (2011). Restructuring of memory layer in electrical system and its novel evolution with nonvolatile logic. In ULSI Process Integration 7 (7 ed., pp. 59-70). (ECS Transactions; Vol. 41, No. 7). https://doi.org/10.1149/1.3633285