Response properties at 2.525 terahertz using high-tc josephson junctions on silicon bicrystal substrates

J. Chen; E. Kobayashi; K. Nakajima; T. Yamashita

doi:10.1109/77.784020

Response properties at 2.525 terahertz using high-tc josephson junctions on silicon bicrystal substrates

J. Chen, E. Kobayashi, K. Nakajima, T. Yamashita

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Using high-rc grain boundary Josephson junctions (GBJJs) made of YBa2Cu,O7.s deposited across silicon bicrystal boundary, we successfully demonstrated direct response at frequency as high as 2.525THz and the operation temperature up to 70K. Also, the effects of response on polarization of electromagnetic waves and the harmonic mixing properties are investigated. It is found that there is no polarization dependence of the response for our high-quality GBJJs. This result is favorable to the spectroscopy application. At frequency as high as 2.525THz, the high-order harmonic mixing at zero and finite bias voltage has been demonstrated.

Original language	English
Pages (from-to)	4479-4482
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	9
Issue number	2 PART 3
DOIs	https://doi.org/10.1109/77.784020
Publication status	Published - 1999 Dec 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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