Resonant terahertz photomixing in integrated high-electron-mobility transistor and quantum-well infrared photodetector device

Victor Ryzhii, Maxim Ryzhii, Irina Khmyrova, Taiichi Otsuji, Michael S. Shur

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We propose a novel heterostructure device for generating of terahertz (THz) radiation based on the integration of a high-electron-mobility transistor (HEMT) and a quantum-well infrared photodetector (QWIP) and utilizing the photomixing of middle- or far-infrared optical signals. The operation of the photomixer under consideration is associated with the resonant excitation of plasma oscillations in the device HEMT section brought about by the transient photocurrent produced in the QWIP by incident infrared radiation. Using the developed device model for HEMT-QWIP photomixers which combines both the analytical description of electron processes and their ensemble Monte Carlo particle modeling, we evaluate the device performance.

Original languageEnglish
Pages (from-to)3648-3651
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - 2006 Apr 25

Keywords

  • High electron mobility transistor
  • Integration
  • Photomixing
  • Plasma resonance
  • Quantum-well infrared photodetector
  • Terahertz radiation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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