Electronic excitations in the hole doped manganese oxides (La 1-xSrxMnO3, x=0.2 and 0.4) have been elucidated by using the resonant inelastic x-ray scattering method. A doping effect in the strongly correlated electron systems has been observed. The scattering spectra show that a salient peak appears in low energies indicating the persistence of the Mott gap. At the same time, the energy gap is partly filled by doping holes and the spectral weight energy shifts toward lower energies. The excitation spectra show little change in the momentum space as is in undoped LaMnO 3. On the other hand, the scattering intensities in the low-energy excitations of x=0.2 are anisotropic in temperature dependence, which indicates an anisotropy of magnetic interaction and underlying effect of the orbital.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2004 Dec|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics