Resonance tunneling transistors based on C60 encapsulated double-walled carbon nanotubes

Y. F. Li, Toshiro Kaneko, R. Hatakeyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report electrical transport properties of resonance tunneling transistors fabricated using C60-fllled metallic double-walled carbon nanotubes. All the examined devices exhibit a strong negative differential resistance (NDR) behavior, and the high peak-to-valley current ratios more than 103 are observed at room temperature. More importantly, the observed NDR characteristics remain stable under forward and backward measurements. In addition, it is found that the applied gate voltages exercise a great influence on the peak voltage of NDR.

Original languageEnglish
Title of host publication2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages175-179
Number of pages5
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China
Duration: 2007 Aug 22007 Aug 5

Publication series

Name2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Other

Other2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
CountryChina
CityHong Kong
Period07/8/207/8/5

Keywords

  • Carbon nanotubes
  • Encapsulation
  • Fullerene
  • Negative differential resistance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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