Abstract
A silicon (Si) microelectromechanical system (MEMS) package using a lightly-doped Si chip carrier for coplanar waveguide (CPW) microwave and millimeter-wave integrated circuits (MMICs) is proposed in order to reduce parasitic problems of leakage, coupling, and resonance. The proposed chip carrier scheme is verified by fabricating and measuring a GaAs CPW on two types of carriers (conductor-back metal and lightly-doped Si) in the frequency range 0.5 to 40 GHz. The proposed MEMS package using the lightly-doped (15 Ω·cm) Si chip carrier and the high resistivity silicon (HRS, 15 kΩ·cm) shows the low loss and resonance-free since the lightly-doped Si chip carrier effectively absorbs and suppresses the resonant leakage. The Si MEMS package for CPW MMICs has an insertion loss (S 21) of 2.0dB, a reflection loss (S11) of 10dB, and a power loss (PL) of 7.5 dB at 40 GHz.
Original language | English |
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Pages (from-to) | 1693-1697 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 44 |
Issue number | 4 A |
DOIs | |
Publication status | Published - 2005 Apr |
Externally published | Yes |
Keywords
- CPW
- HRS
- MEMS
- MMICs
- Package
- Silicon
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)