A silicon (Si) microelectromechanical system (MEMS) package using a lightly-doped Si chip carrier for coplanar waveguide (CPW) microwave and millimeter-wave integrated circuits (MMICs) is proposed in order to reduce parasitic problems of leakage, coupling, and resonance. The proposed chip carrier scheme is verified by fabricating and measuring a GaAs CPW on two types of carriers (conductor-back metal and lightly-doped Si) in the frequency range 0.5 to 40 GHz. The proposed MEMS package using the lightly-doped (15 Ω·cm) Si chip carrier and the high resistivity silicon (HRS, 15 kΩ·cm) shows the low loss and resonance-free since the lightly-doped Si chip carrier effectively absorbs and suppresses the resonant leakage. The Si MEMS package for CPW MMICs has an insertion loss (S 21) of 2.0dB, a reflection loss (S11) of 10dB, and a power loss (PL) of 7.5 dB at 40 GHz.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 A|
|Publication status||Published - 2005 Apr 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)