Resistivity reduction by external oxidation of Cu-Mn alloy films for semiconductor interconnect application

J. Iijima; Y. Fujii; K. Neishi; Junichi Koike

doi:10.1116/1.3179167

Resistivity reduction by external oxidation of Cu-Mn alloy films for semiconductor interconnect application

J. Iijima, Y. Fujii, K. Neishi, Junichi Koike

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

A self-forming barrier process using Cu-Mn alloy has been reported to exhibit excellent reliability for interconnect lines in advanced semiconductor devices. However, Mn increases resistivity. In this work, the authors investigated optimum annealing conditions to remove Mn from the Cu-Mn alloy by forming an external Mn oxide and to reduce resistivity to a level of pure Cu. The results were interpreted by an external oxidation mechanism of Mn atoms.

Original language	English
Pages (from-to)	1963-1968
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	4
DOIs	https://doi.org/10.1116/1.3179167
Publication status	Published - 2009 Aug 14

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "A self-forming barrier process using Cu-Mn alloy has been reported to exhibit excellent reliability for interconnect lines in advanced semiconductor devices. However, Mn increases resistivity. In this work, the authors investigated optimum annealing conditions to remove Mn from the Cu-Mn alloy by forming an external Mn oxide and to reduce resistivity to a level of pure Cu. The results were interpreted by an external oxidation mechanism of Mn atoms.",

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N2 - A self-forming barrier process using Cu-Mn alloy has been reported to exhibit excellent reliability for interconnect lines in advanced semiconductor devices. However, Mn increases resistivity. In this work, the authors investigated optimum annealing conditions to remove Mn from the Cu-Mn alloy by forming an external Mn oxide and to reduce resistivity to a level of pure Cu. The results were interpreted by an external oxidation mechanism of Mn atoms.

AB - A self-forming barrier process using Cu-Mn alloy has been reported to exhibit excellent reliability for interconnect lines in advanced semiconductor devices. However, Mn increases resistivity. In this work, the authors investigated optimum annealing conditions to remove Mn from the Cu-Mn alloy by forming an external Mn oxide and to reduce resistivity to a level of pure Cu. The results were interpreted by an external oxidation mechanism of Mn atoms.

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Resistivity reduction by external oxidation of Cu-Mn alloy films for semiconductor interconnect application

Abstract

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