Resistivity reduction by external oxidation of Cu-Mn alloy films for semiconductor interconnect application

J. Iijima, Y. Fujii, K. Neishi, Junichi Koike

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)

Abstract

A self-forming barrier process using Cu-Mn alloy has been reported to exhibit excellent reliability for interconnect lines in advanced semiconductor devices. However, Mn increases resistivity. In this work, the authors investigated optimum annealing conditions to remove Mn from the Cu-Mn alloy by forming an external Mn oxide and to reduce resistivity to a level of pure Cu. The results were interpreted by an external oxidation mechanism of Mn atoms.

Original languageEnglish
Pages (from-to)1963-1968
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number4
DOIs
Publication statusPublished - 2009 Aug 14

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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