TY - JOUR
T1 - Resistivity and Hall effect of GdSb and TmSb
AU - Li, D. X.
AU - Haga, Y.
AU - Kwon, Y. S.
AU - Shida, H.
AU - Suzuki, T.
AU - Nimori, S.
AU - Kido, G.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1995/2
Y1 - 1995/2
N2 - GdSb and TmSb are typical 'model' materials in rare earth compounds. The former is an exchange interaction only sample and the latter is a CEF only sample. In order to compare the transport properties between the two samples, we have measured the Hall effect and resistivity of pure GdSb and TmSb in various fields. The CEF effect and magnetic scattering have been observed in both resistivity and Hall effect measurements for TmSb and GdSb, respectively. The mobilities of electrons and holes as well as the carrier concentration are calculated using the experimental data.
AB - GdSb and TmSb are typical 'model' materials in rare earth compounds. The former is an exchange interaction only sample and the latter is a CEF only sample. In order to compare the transport properties between the two samples, we have measured the Hall effect and resistivity of pure GdSb and TmSb in various fields. The CEF effect and magnetic scattering have been observed in both resistivity and Hall effect measurements for TmSb and GdSb, respectively. The mobilities of electrons and holes as well as the carrier concentration are calculated using the experimental data.
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U2 - 10.1016/0304-8853(94)01016-1
DO - 10.1016/0304-8853(94)01016-1
M3 - Article
AN - SCOPUS:0029249988
VL - 140-144
SP - 1165
EP - 1166
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
IS - PART 2
ER -