Resistive transition in YBa2Cu3Oz and Bi2(Sr,Ca)3Cu2Oz CVD films under high magnetic field

N. Kobayashi; H. Iwasaki; H. Kawabe; K. Watanabe; H. Yamane; H. Kurosawa; H. Masumoto; T. Hirai; Y. Muto

doi:10.1016/0921-4534(89)90383-3

Resistive transition in YBa₂Cu₃O_z and Bi₂(Sr,Ca)₃Cu₂O_z CVD films under high magnetic field

N. Kobayashi, H. Iwasaki, H. Kawabe, K. Watanabe, H. Yamane, H. Kurosawa, H. Masumoto, T. Hirai, Y. Muto

Research output: Contribution to journal › Article

47 Citations (Scopus)

Abstract

Electrical resistance of YBa₂Cu₃O_z and Bi₂(Sr,Ca)₃Cu₂O_z CVD films in the mixed state was investigated in magnetic field up to 25 T. The sheet resistance in the broad transition is expressed by R_□=R₀exp(-U₀/k_BT) on the low temperature side, and it is independent of the configuration of current with respect to the magnetic field. The activation energy U₀ is larger in YBa₂Cu₃O_z films. The U₀ value becomes smaller proportional to B^-α with increasing field. Moreover, the resistance follows a power law of B^γ at constant temperature. The value of exponent γ is larger than unity and increases with decreasing temperature. These behaviors are discussed based on the flux creep models by Tinkham and by Dew-Hughes.

Original language	English
Pages (from-to)	295-300
Number of pages	6
Journal	Physica C: Superconductivity and its applications
Volume	159
Issue number	3
DOIs	https://doi.org/10.1016/0921-4534(89)90383-3
Publication status	Published - 1989 Jun 15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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Kobayashi, N., Iwasaki, H., Kawabe, H., Watanabe, K., Yamane, H., Kurosawa, H., Masumoto, H., Hirai, T., & Muto, Y. (1989). Resistive transition in YBa₂Cu₃O_z and Bi₂(Sr,Ca)₃Cu₂O_z CVD films under high magnetic field. Physica C: Superconductivity and its applications, 159(3), 295-300. https://doi.org/10.1016/0921-4534(89)90383-3

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title = "Resistive transition in YBa2Cu3Oz and Bi2(Sr,Ca)3Cu2Oz CVD films under high magnetic field",

abstract = "Electrical resistance of YBa2Cu3Oz and Bi2(Sr,Ca)3Cu2Oz CVD films in the mixed state was investigated in magnetic field up to 25 T. The sheet resistance in the broad transition is expressed by R□=R0exp(-U0/kBT) on the low temperature side, and it is independent of the configuration of current with respect to the magnetic field. The activation energy U0 is larger in YBa2Cu3Oz films. The U0 value becomes smaller proportional to B-α with increasing field. Moreover, the resistance follows a power law of Bγ at constant temperature. The value of exponent γ is larger than unity and increases with decreasing temperature. These behaviors are discussed based on the flux creep models by Tinkham and by Dew-Hughes.",

author = "N. Kobayashi and H. Iwasaki and H. Kawabe and K. Watanabe and H. Yamane and H. Kurosawa and H. Masumoto and T. Hirai and Y. Muto",

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T1 - Resistive transition in YBa2Cu3Oz and Bi2(Sr,Ca)3Cu2Oz CVD films under high magnetic field

AU - Kobayashi, N.

AU - Iwasaki, H.

AU - Kawabe, H.

AU - Watanabe, K.

AU - Yamane, H.

AU - Kurosawa, H.

AU - Masumoto, H.

AU - Hirai, T.

AU - Muto, Y.

PY - 1989/6/15

Y1 - 1989/6/15

N2 - Electrical resistance of YBa2Cu3Oz and Bi2(Sr,Ca)3Cu2Oz CVD films in the mixed state was investigated in magnetic field up to 25 T. The sheet resistance in the broad transition is expressed by R□=R0exp(-U0/kBT) on the low temperature side, and it is independent of the configuration of current with respect to the magnetic field. The activation energy U0 is larger in YBa2Cu3Oz films. The U0 value becomes smaller proportional to B-α with increasing field. Moreover, the resistance follows a power law of Bγ at constant temperature. The value of exponent γ is larger than unity and increases with decreasing temperature. These behaviors are discussed based on the flux creep models by Tinkham and by Dew-Hughes.

AB - Electrical resistance of YBa2Cu3Oz and Bi2(Sr,Ca)3Cu2Oz CVD films in the mixed state was investigated in magnetic field up to 25 T. The sheet resistance in the broad transition is expressed by R□=R0exp(-U0/kBT) on the low temperature side, and it is independent of the configuration of current with respect to the magnetic field. The activation energy U0 is larger in YBa2Cu3Oz films. The U0 value becomes smaller proportional to B-α with increasing field. Moreover, the resistance follows a power law of Bγ at constant temperature. The value of exponent γ is larger than unity and increases with decreasing temperature. These behaviors are discussed based on the flux creep models by Tinkham and by Dew-Hughes.

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