Resistive switching of organic-inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

Shunsuke Yamamoto; Takahisa Kitanaka; Tokuji Miyashita; Masaya Mitsuishi

doi:10.1088/1361-6528/aabdc6

Resistive switching of organic-inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO₂ films

Shunsuke Yamamoto, Takahisa Kitanaka, Tokuji Miyashita, Masaya Mitsuishi

Polymer Hybrid Materials Research Center

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO₂ ultra-thin films. The SiO₂ film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)|SiO₂|PEDOT:PSS architecture show good resistive switching performance with set-reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO₂ film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS|SiO₂ interface.

Original language	English
Article number	26LT02
Journal	Nanotechnology
Volume	29
Issue number	26
DOIs	https://doi.org/10.1088/1361-6528/aabdc6
Publication status	Published - 2018 Apr 30

Keywords

SiO
conductive polymer
hybrid
resistive switching

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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@article{46160696109d4ebbbef6b076046848fd,

title = "Resistive switching of organic-inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films",

abstract = "We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)|SiO2|PEDOT:PSS architecture show good resistive switching performance with set-reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS|SiO2 interface.",

keywords = "SiO, conductive polymer, hybrid, resistive switching",

author = "Shunsuke Yamamoto and Takahisa Kitanaka and Tokuji Miyashita and Masaya Mitsuishi",

note = "Funding Information: This work was partially supported by Grants-in-Aid for Young Scientists ((B) 26810111) and Scientific Research (B) (16H04197) from the Japan Society for the Promotion of Science (JSPS) and for research in Innovative Areas (New Polymeric Materials Based on Element-Blocks, 15H00719) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan (MEXT). SY appreciates financial support from the Murata Science Foundation, the JGC-S Scholarship Foundation, and the Polymer Hybrid Materials Research Center (PHyM), IMRAM, Tohoku University. Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

year = "2018",

month = apr,

day = "30",

doi = "10.1088/1361-6528/aabdc6",

language = "English",

volume = "29",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "26",

}

TY - JOUR

T1 - Resistive switching of organic-inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

AU - Yamamoto, Shunsuke

AU - Kitanaka, Takahisa

AU - Miyashita, Tokuji

AU - Mitsuishi, Masaya

N1 - Funding Information: This work was partially supported by Grants-in-Aid for Young Scientists ((B) 26810111) and Scientific Research (B) (16H04197) from the Japan Society for the Promotion of Science (JSPS) and for research in Innovative Areas (New Polymeric Materials Based on Element-Blocks, 15H00719) from the Ministry of Education, Culture, Sports, Science, and Technology in Japan (MEXT). SY appreciates financial support from the Murata Science Foundation, the JGC-S Scholarship Foundation, and the Polymer Hybrid Materials Research Center (PHyM), IMRAM, Tohoku University. Publisher Copyright: © 2018 IOP Publishing Ltd.

PY - 2018/4/30

Y1 - 2018/4/30

N2 - We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)|SiO2|PEDOT:PSS architecture show good resistive switching performance with set-reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS|SiO2 interface.

AB - We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)|SiO2|PEDOT:PSS architecture show good resistive switching performance with set-reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS|SiO2 interface.

KW - SiO

KW - conductive polymer

KW - hybrid

KW - resistive switching

UR - http://www.scopus.com/inward/record.url?scp=85047772874&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047772874&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aabdc6

DO - 10.1088/1361-6528/aabdc6

M3 - Article

C2 - 29708100

AN - SCOPUS:85047772874

VL - 29

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 26

M1 - 26LT02

ER -