Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

Takeo Ohno, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Resistive switching in a Cu/Ta2O5/Pt structure that consisted of a few nanometer-thick Ta2O5 film was demonstrated. The Ta2O5 film with thicknesses of 2-5 nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2 V and multilevel switching operation.

Original languageEnglish
Article number173110
JournalApplied Physics Letters
Volume106
Issue number17
DOIs
Publication statusPublished - 2015 Apr 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation'. Together they form a unique fingerprint.

Cite this