Resistive switching characteristics of isolated core-shell iron oxide/germanium nanocrystals epitaxially grown on Si substrates

Hideki Matsui, Takafumi Ishibe, Tsukasa Terada, Shunya Sakane, Kentaro Watanabe, Shotaro Takeuchi, Akira Sakai, Shigeru Kimura, Yoshiaki Nakamura

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6 Citations (Scopus)

Abstract

The core-shell nanostructure of epitaxial Fe3O4 nanocrystals over Ge nuclei showed a large Off/On resistance ratio (∼100), which was the largest value in Fe3O4 materials. The nanocrystals with an average diameter of ∼20 nm were grown epitaxially on Si substrates, whose areal density was high (∼1011 cm-2), and each nanocrystal was isolated from each other. The electrical measurement of the individual isolated nanocrystals by conductive-atomic force microscopy showed the bipolar-type resistive switching in local voltage-current curves, depending on the Fe-O composition. It was also revealed that activation sites for resistive switching were the Fe3O4/Ge interfaces, where electric-field-induced compositional variation caused large resistive changes. This demonstrated the possibility of developing resistance random access memory devices based on ubiquitous materials.

Original languageEnglish
Article number031601
JournalApplied Physics Letters
Volume112
Issue number3
DOIs
Publication statusPublished - 2018 Jan 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Matsui, H., Ishibe, T., Terada, T., Sakane, S., Watanabe, K., Takeuchi, S., Sakai, A., Kimura, S., & Nakamura, Y. (2018). Resistive switching characteristics of isolated core-shell iron oxide/germanium nanocrystals epitaxially grown on Si substrates. Applied Physics Letters, 112(3), [031601]. https://doi.org/10.1063/1.5013349