Resistive switching characteristics of hydrogen peroxide surface oxidized ZnO-based transparent resistive memory Devices

F. M. Simanjuntak, B. Pattanayak, C. C. Lin, T. Y. Tseng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

The impact of hydrogen peroxide treatment on the surface of ZnO film used for transparent resistive memory device application has been investigated. The surface oxidation was conducted by immersing the ZnO film into a hydrogen peroxide solution. Switching characteristics of as-deposited and surface-treated devices were initiated by bipolar electroformed programming. Based on our previous result, superior memory performance can be achieved when the bipolar forming process is initiated to activate the switching behavior. However, in this experiment, such bipolar forming process cannot be performed on the as-deposited device. Interestingly, after hydrogen peroxide surface treatment, the device is able to perform a successful bipolar forming, thus, shows a distinct switching characteristic. Consequently, memory performance of surface treated device exhibits good endurance as compared to the as-deposited device. This study offers a novel and simple method to enhance switching performance of the transparent resistive memory devices.

Original languageEnglish
Title of host publicationProcesses at the Semiconductor Solution Interface 7
EditorsA. Hillier, C. O'Dwyer, R. P. Lynch, H. Wang, M. Sunkara, D. N. Buckley, A. Etcheberry, P. Vereecken
PublisherElectrochemical Society Inc.
Pages155-160
Number of pages6
Edition4
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2017 Jan 1
Externally publishedYes
EventProcesses at the Semiconductor Solution Interface 7, PSSI 2017 - 231st ECS Meeting 2017 - New Orleans, United States
Duration: 2017 May 282017 Jun 1

Publication series

NameECS Transactions
Number4
Volume77
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherProcesses at the Semiconductor Solution Interface 7, PSSI 2017 - 231st ECS Meeting 2017
CountryUnited States
CityNew Orleans
Period17/5/2817/6/1

ASJC Scopus subject areas

  • Engineering(all)

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    Simanjuntak, F. M., Pattanayak, B., Lin, C. C., & Tseng, T. Y. (2017). Resistive switching characteristics of hydrogen peroxide surface oxidized ZnO-based transparent resistive memory Devices. In A. Hillier, C. O'Dwyer, R. P. Lynch, H. Wang, M. Sunkara, D. N. Buckley, A. Etcheberry, & P. Vereecken (Eds.), Processes at the Semiconductor Solution Interface 7 (4 ed., pp. 155-160). (ECS Transactions; Vol. 77, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/07704.0155ecst