Resistive switching characteristics in memristors with Al2O3/TiO2 and TiO2/Al2O3 bilayers

Liudmila Alekseeva, Toshihide Nabatame, Toyohiro Chikyo, Anatolii Petrov

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16 Citations (Scopus)

Abstract

Differences between the resistive switching characteristics of Al2O3/TiO2 and TiO2/Al2O3 bilayer structures, fabricated by atomic layer deposition at 200 °C and post-deposition annealing, were studied in Pt bottom electrode (Pt-BE)/insulator/Pt top electrode (Pt-TE) capacitors. The Pt-BE/Al2O3/TiO2/Pt-TE capacitor exhibits stable bipolar resistive switching with an on-resistance/off-resistance ratio of ∼102 controlled by a small voltage of ±0.8 V. The forming process occurs in two steps of breaking of the Al2O3 layer and transfer of oxygen vacancies (VO) into the TiO2 layer. The capacitor showed poor endurance, particularly in the high-resistance state under vacuum conditions. This indicates that the insulating TiO2 layer without VO is not formed near the Al2O3 layer because oxygen cannot be introduced from the exterior. On the other hand, in the Pt-BE/TiO2/Al2O3/Pt-TE capacitor, multilevel resistive switching with several applied voltage-dependent nonvolatile states is observed. The switching mechanism corresponds to the Al2O3 layer's trapped VO concentration, which is controlled by varying the applied voltage.

Original languageEnglish
Article number08PB02
JournalJapanese journal of applied physics
Volume55
Issue number8S2
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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