TY - GEN
T1 - Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structures
AU - Dou, C.
AU - Mukai, K.
AU - Kakushima, K.
AU - Ahmet, P.
AU - Tsutsui, K.
AU - Nishiyama, A.
AU - Sugii, N.
AU - Natori, K.
AU - Hattori, T.
AU - Iwai, H.
PY - 2011
Y1 - 2011
N2 - As one of emerging next-generation nonvolatile memories, Resistive RAM (ReRAM) still calls new material technology to improve its performance. By utilizing the special characteristics of cerium oxides, this paper proposes a new method to improve the performance of CeO2 based ReRAM devices by using Si buffer layer. It is confirmed that the device having W/CeO 2/Si/TiN structure shows significant advantage over the device without Si layer for memory application in terms of lower forming voltage, smaller compliance current, larger window and better endurance characteristic. The effect of Si buffer layer is discussed in detail and a model based on filament switching mechanism was also proposed to explain the underlying reasons.
AB - As one of emerging next-generation nonvolatile memories, Resistive RAM (ReRAM) still calls new material technology to improve its performance. By utilizing the special characteristics of cerium oxides, this paper proposes a new method to improve the performance of CeO2 based ReRAM devices by using Si buffer layer. It is confirmed that the device having W/CeO 2/Si/TiN structure shows significant advantage over the device without Si layer for memory application in terms of lower forming voltage, smaller compliance current, larger window and better endurance characteristic. The effect of Si buffer layer is discussed in detail and a model based on filament switching mechanism was also proposed to explain the underlying reasons.
UR - http://www.scopus.com/inward/record.url?scp=79960885592&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79960885592&partnerID=8YFLogxK
U2 - 10.1149/1.3572307
DO - 10.1149/1.3572307
M3 - Conference contribution
AN - SCOPUS:79960885592
SN - 9781566778657
T3 - ECS Transactions
SP - 597
EP - 603
BT - Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
T2 - Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
Y2 - 1 May 2011 through 6 May 2011
ER -