Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structures

C. Dou; K. Mukai; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3572307

Resistive switching behaviors of ReRAM having W/CeO₂/Si/TiN structures

C. Dou, K. Mukai, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

As one of emerging next-generation nonvolatile memories, Resistive RAM (ReRAM) still calls new material technology to improve its performance. By utilizing the special characteristics of cerium oxides, this paper proposes a new method to improve the performance of CeO₂ based ReRAM devices by using Si buffer layer. It is confirmed that the device having W/CeO ₂/Si/TiN structure shows significant advantage over the device without Si layer for memory application in terms of lower forming voltage, smaller compliance current, larger window and better endurance characteristic. The effect of Si buffer layer is discussed in detail and a model based on filament switching mechanism was also proposed to explain the underlying reasons.

Original language	English
Title of host publication	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Pages	597-603
Number of pages	7
Edition	4
DOIs	https://doi.org/10.1149/1.3572307
Publication status	Published - 2011
Externally published	Yes
Event	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting - Montreal, QC, Canada Duration: 2011 May 1 → 2011 May 6

Publication series

Name	ECS Transactions
Number	4
Volume	35
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
Country	Canada
City	Montreal, QC
Period	11/5/1 → 11/5/6

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3572307

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Resistive switching behaviors of ReRAM having W/CeO₂/Si/TiN structures. / Dou, C.; Mukai, K.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Natori, K.; Hattori, T.; Iwai, H.

Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11. 4. ed. 2011. p. 597-603 (ECS Transactions; Vol. 35, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Dou, C, Mukai, K, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T & Iwai, H 2011, Resistive switching behaviors of ReRAM having W/CeO₂/Si/TiN structures. in Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11. 4 edn, ECS Transactions, no. 4, vol. 35, pp. 597-603, Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting, Montreal, QC, Canada, 11/5/1. https://doi.org/10.1149/1.3572307

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abstract = "As one of emerging next-generation nonvolatile memories, Resistive RAM (ReRAM) still calls new material technology to improve its performance. By utilizing the special characteristics of cerium oxides, this paper proposes a new method to improve the performance of CeO2 based ReRAM devices by using Si buffer layer. It is confirmed that the device having W/CeO 2/Si/TiN structure shows significant advantage over the device without Si layer for memory application in terms of lower forming voltage, smaller compliance current, larger window and better endurance characteristic. The effect of Si buffer layer is discussed in detail and a model based on filament switching mechanism was also proposed to explain the underlying reasons.",

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AU - Nishiyama, A.

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AB - As one of emerging next-generation nonvolatile memories, Resistive RAM (ReRAM) still calls new material technology to improve its performance. By utilizing the special characteristics of cerium oxides, this paper proposes a new method to improve the performance of CeO2 based ReRAM devices by using Si buffer layer. It is confirmed that the device having W/CeO 2/Si/TiN structure shows significant advantage over the device without Si layer for memory application in terms of lower forming voltage, smaller compliance current, larger window and better endurance characteristic. The effect of Si buffer layer is discussed in detail and a model based on filament switching mechanism was also proposed to explain the underlying reasons.

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