Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory

Pragya Singh, Firman Mangasa Simanjuntak, Amit Kumar, Tseung Yuen Tseng

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application.

Original languageEnglish
Pages (from-to)828-833
Number of pages6
JournalThin Solid Films
Publication statusPublished - 2018 Aug 30


  • Chemical solution deposition
  • Conductive-bridge random-access memory
  • Gallium
  • Nanorods
  • Resistive switching
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory'. Together they form a unique fingerprint.

Cite this