Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices

Kohei Fujiwara, Takumi Nemoto, Marcelo J. Rozenberg, Yoshinobu Nakamura, Hidenori Takagi

Research output: Contribution to journalArticle

119 Citations (Scopus)

Abstract

The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed upon the initial voltage application (forming process). It is found that the resistance switching phenomenon only occurs when just a single bridge is formed during a soft dielectric breakdown. We argue that the reduction and oxidation of this conducting bridge by the action of an applied field and/or current gives rise to a novel nonvolatile memory effect.

Original languageEnglish
Pages (from-to)6266-6271
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume47
Issue number8 PART 1
DOIs
Publication statusPublished - 2008 Aug 8
Externally publishedYes

Keywords

  • CuO
  • Dielectric breakdown
  • Memory effect
  • ReRAM
  • Reduction-oxidation
  • Resistance switching

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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