Resistance ridges along filling factor ν = 4i in SiO2/Si/ SiO2 quantum wells

K. Takashina, M. Brun, T. Ota, D. K. Maude, A. Fujiwara, Y. Ono, H. Inokawa, Y. Hirayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Physics & Astronomy