Resistance ridges along filling factor ν = 4i in SiO2/Si/ SiO2 quantum wells

K. Takashina, M. Brun, T. Ota, D. K. Maude, A. Fujiwara, Y. Ono, H. Inokawa, Y. Hirayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We examine Landau level coincidences in SiO2/Si(100)/SiO 2 quantum wells. Surprisingly, under certain conditions of apparent multiple degeneracy, our data reveal strikingly novel behavior where the resistance is elevated at filling factors that are integer multiples of 4. This structure persists when underlying single particle energies are swept leading to resistance ridges running along v = 4i. The data suggest a new type of many-body effect due to the combined degeneracy of valley and spin.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages625-626
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/7/2406/7/28

Keywords

  • Coincidence
  • Landau levels
  • Magnetotransport
  • Valley degeneracy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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