Resistance drift of MgO magnetic tunnel junctions by trapping and degradation of coherent tunneling

Keiji Hosotani; Makoto Nagamine; Hisanori Aikawa; Naoharu Shimomura; Masahiko Nakayama; Tadashi Kai; Sumio Ikegawa; Yoshiaki Asao; Hiroaki Yoda; Akihiro Nitayama

doi:10.1109/RELPHY.2008.4558997

Resistance drift of MgO magnetic tunnel junctions by trapping and degradation of coherent tunneling

Keiji Hosotani, Makoto Nagamine, Hisanori Aikawa, Naoharu Shimomura, Masahiko Nakayama, Tadashi Kai, Sumio Ikegawa, Yoshiaki Asao, Hiroaki Yoda, Akihiro Nitayama

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Original language	English
Title of host publication	46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages	703-704
Number of pages	2
DOIs	https://doi.org/10.1109/RELPHY.2008.4558997
Publication status	Published - 2008 Sep 17
Event	46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States Duration: 2008 Apr 27 → 2008 May 1

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
Country	United States
City	Phoenix, AZ
Period	08/4/27 → 08/5/1

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/RELPHY.2008.4558997

Cite this

Hosotani, K., Nagamine, M., Aikawa, H., Shimomura, N., Nakayama, M., Kai, T., Ikegawa, S., Asao, Y., Yoda, H., & Nitayama, A. (2008). Resistance drift of MgO magnetic tunnel junctions by trapping and degradation of coherent tunneling. In 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS (pp. 703-704). [4558997] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2008.4558997

Resistance drift of MgO magnetic tunnel junctions by trapping and degradation of coherent tunneling. / Hosotani, Keiji; Nagamine, Makoto; Aikawa, Hisanori; Shimomura, Naoharu; Nakayama, Masahiko; Kai, Tadashi; Ikegawa, Sumio; Asao, Yoshiaki; Yoda, Hiroaki; Nitayama, Akihiro.

46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS. 2008. p. 703-704 4558997 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hosotani, K, Nagamine, M, Aikawa, H, Shimomura, N, Nakayama, M, Kai, T, Ikegawa, S, Asao, Y, Yoda, H & Nitayama, A 2008, Resistance drift of MgO magnetic tunnel junctions by trapping and degradation of coherent tunneling. in 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS., 4558997, IEEE International Reliability Physics Symposium Proceedings, pp. 703-704, 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS, Phoenix, AZ, United States, 08/4/27. https://doi.org/10.1109/RELPHY.2008.4558997

Hosotani K, Nagamine M, Aikawa H, Shimomura N, Nakayama M, Kai T et al. Resistance drift of MgO magnetic tunnel junctions by trapping and degradation of coherent tunneling. In 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS. 2008. p. 703-704. 4558997. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2008.4558997

Hosotani, Keiji ; Nagamine, Makoto ; Aikawa, Hisanori ; Shimomura, Naoharu ; Nakayama, Masahiko ; Kai, Tadashi ; Ikegawa, Sumio ; Asao, Yoshiaki ; Yoda, Hiroaki ; Nitayama, Akihiro. / Resistance drift of MgO magnetic tunnel junctions by trapping and degradation of coherent tunneling. 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS. 2008. pp. 703-704 (IEEE International Reliability Physics Symposium Proceedings).

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