Resistance dependence of transport properties in metal-multiwall carbon nanotube-metal structures

Akinobu Kanda, Kazuhito Tsukagoshi, Seiji Uryu, Youiti Ootuka, Yoshinobu Aoyagi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We have studied current-voltage (I-V) characteristics of metal-on-tube metal-multiwall carbon nanotube-metal structures as a function of gate voltage. Device resistances ranged from about 10 kΩ to several MΩ, depending on the electrode metal and its deposition condition. When the resistance was much higher than the quantum resistance (RQ = h/4e2 ≈ 6.5 kΩ), samples showed clear Coulomb blockade. We find that the tunnel barrier is located in the interface between the MWNT and the metal electrode. As the resistance decreased, the Coulomb oscillations became irregular with respect to the gate voltage, but the high resistance region around V=0 and its dependence on gate voltage survived at resistance smaller than 10 kΩ.

Original languageEnglish
Pages (from-to)33-37
Number of pages5
JournalMicroelectronic Engineering
Issue number1-3
Publication statusPublished - 2002 Aug
Externally publishedYes


  • Coulomb blockade
  • Coulomb oscillation
  • Multiwall carbon nanotube

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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